NCE N-Channel Super Trench Power MOSFET

Description The NCEP30T12G uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high

NCE N-Channel Super Trench Power MOSFET

Description The NCEP30T12G uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high

Automotive 3000 W TVS in SMC

Features • AEC-Q101 qualified • Peak pulse power: – 3000 W (10/1000 μs) – up to 40 kW (8/20 μs) • Stand-off voltage range from 5 V to 188 V • Unidirectional and bidirectional types • Low leakage current: 0.2 μA at 25 °C • Operating Tj max: 175 °C • JEDEC registered package outline • Lead

AT-Cut Crystal - Square Wave - 12.0 Volts

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SC-Cut Crystal - Square Wave - 12.0 Volts

文件：105.02 Kbytes Page：1 Pages