HIGH EFFICIENCY ULTRAFAST DIODE

Description The STTH3002 uses STs new 200 V planar Pt doping technology, and is specially suited for switching mode base drive and transistor circuits. Packaged in DO-247, DOP3I, and D²PAK, this device is intended for use in low voltage, high frequency inverters, free wheeling and polarity prote

High efficiency ultrafast diode

Description Dual center tab rectifier suited for switch mode power supplies and high frequency DC to DC converters. Packaged in TO-220AB, TO-247, I2PAK, D2PAK, and TOP3I, this device is intended for use in low voltage, high frequency inverters, free wheeling and polarity protection Features ■

封装/外壳：TO-220-3 包装：管件 描述：DIODE ARRAY GP 200V 15A TO220AB 分立半导体产品 二极管 - 整流器 - 阵列

PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR?

General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. Polyfet process features gold metal for greatly extended lifetime

Thyratrons

Description Thyratrons are fast acting high voltage switches suitable for a variety of applications including radar, laser and scientific use. PerkinElmer’s thyratrons are constructed of ceramic and metal for strength and long life. Over 300 thyratron types are available from PerkinElmer. The t

420-MHz HIGH-SPEED CURRENT-FEEDBACK AMPLIFIERS

文件：633.47 Kbytes Page：32 Pages

420-MHz HIGH-SPEED CURRENT-FEEDBACK AMPLIFIERS

文件：633.47 Kbytes Page：32 Pages

420-MHz HIGH-SPEED CURRENT-FEEDBACK AMPLIFIERS

文件：633.47 Kbytes Page：32 Pages