HIGH EFFICIENCY ULTRAFAST DIODE

DESCRIPTION Dual center tap rectifier suited for Switch Mode Power Supplies and high frequency DC to DC converters. This device is especially intended for use in low voltage, high frequency inverters, free wheeling and polarity protection applications. FEATURES AND BENEFITS ■ Suited for SMPS

HIGH EFFICIENCY ULTRAFAST DIODE

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封装/外壳：TO-220-3 整包 包装：管件 描述：DIODE ARRAY GP 200V 6.5A TO220FP 分立半导体产品 二极管 - 整流器 - 阵列

15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 200 VOLTS 200 WATTS

15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 200 VOLTS 200 WATTS MJL1302A -->PNP MJL3281A -->NPN • The MJL3281A and MJL1302A are PowerBase power transistors for high power audio, disk head positioners and other linear applications. • Designed for 100 W Audio Frequency • Gai

15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 200 VOLTS 200 WATTS

15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 200 VOLTS 200 WATTS MJL1302A -->PNP MJL3281A -->NPN • The MJL3281A and MJL1302A are PowerBase power transistors for high power audio, disk head positioners and other linear applications. • Designed for 100 W Audio Frequency • Gai

TMOS POWER FET 42 AMPERES 30 VOLTS RDS(on) = 22 mohm

This advanced high cell density HDTMOS power FET is designed to withstand high energy in the avalanche and commutation modes. This new energy efficient design also offers a drain–to–source diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplie

15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 200 VOLTS 250 WATTS

Complementary NPN-PNP Silicon Power Bipolar Transistor The MJ3281A and MJ1302A are PowerBase power transistors for high power audio, disk head positioners and other linear applications. • Designed for 100 W Audio Frequency • Gain Complementary: — Gain Linearity from 100 mA to 7 A — Hi

MEDIUM POWER AMPLIFIER GaAs MMIC

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