Ultra fast Rectifier

FEATURES • With TO-220 packaging • Metal silicon junction, majority carrier conduction • Low power loss, high efficiency • Guardring for overvoltage protection • High surge capability • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • Switch

TURBOSWITCH ULTRA-FAST HIGH VOLTAGE DIODE

DESCRIPTION TURBOSWITCH, family, drastically cuts losses in both the diode and the associated switching IGBT or MOSFET in all “freewheel mode” operations and is particularly suitable and efficient in motor control freewheel applications and in booster diode applications in power factor control ci

TURBOSWITCH ULTRA-FAST HIGH VOLTAGE DIODE

DESCRIPTION TURBOSWITCH, family, drastically cuts losses in both the diode and the associated switching IGBT or MOSFET in all “freewheel mode” operations and is particularly suitable and efficient in motor control freewheel applications and in booster diode applications in power factor control ci

TURBOSWITCH ULTRA-FAST HIGH VOLTAGE DIODE

DESCRIPTION TURBOSWITCH, family, drastically cuts losses in both the diode and the associated switching IGBT or MOSFET in all “freewheel mode” operations and is particularly suitable and efficient in motor control freewheel applications and in booster diode applications in power factor control ci

TURBOSWITCH ULTRA-FAST HIGH VOLTAGE DIODE

DESCRIPTION TURBOSWITCH, family, drastically cuts losses in both the diode and the associated switching IGBT or MOSFET in all “freewheel mode” operations and is particularly suitable and efficient in motor control freewheel applications and in booster diode applications in power factor control ci

TURBOSWITCH ULTRA-FAST HIGH VOLTAGE DIODE

封装/外壳：TO-263-3，D²Pak（2 引线 + 接片），TO-263AB 包装：剪切带（CT） 描述：DIODE GEN PURP 600V 12A D2PAK 分立半导体产品 二极管 - 整流器 - 单

封装/外壳：TO-263-3，D²Pak（2 引线 + 接片），TO-263AB 包装：剪切带（CT） 描述：DIODE GEN PURP 600V 12A D2PAK 分立半导体产品 二极管 - 整流器 - 单

PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR???

General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. Polyfet process features gold metal for greatly extended lifetim

Integrated Circuit Phase Lock Loop (PLL) Stereo Decoder

Features: ● Requires No Inductors ● Low External Part Count ● Only Oscillator Frequency Adjustment Necessary ● Integral Stereo/Monaural Switch 75mA Lamp Driving Capability ● Wide Dynamic Range: Typically up to 1.3V(RMS) Composite Input Signal ● Wide Supply Voltage: 8V to 16V ● Excellent Cha

High efficiency DC/DC converter

文件：78.42 Kbytes Page：16 Pages

High efficiency DC/DC converter

文件：78.42 Kbytes Page：16 Pages