High voltage fast-switching NPN power transistor

Description The device is manufactured using high voltage multi-epitaxial planar technology for high switching speeds and medium voltage capability. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The device is desi

Silicon NPN Power Transistor

DESCRIPTION · Collector-Emitter Breakdown Voltage -V(BR)CEO= 400V(Min) · Collector-Emitter Saturation Voltage -VCE(sat):1.5V(Max) @IC=1.6A APPLICATIONS · Electronic Ballast Fluorescent Lighting · Flyback and Forward Single Transistor Low Power Converters

封装/外壳：TO-225AA，TO-126-3 包装：管件 描述：TRANS NPN 400V 2A SOT32-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

High voltage fast-switching NPN power transistor

High voltage fast-switching NPN power transistor

Description The device is manufactured using high voltage multi-epitaxial planar technology for high switching speeds and medium voltage capability. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The device is desi

封装/外壳：TO-225AA，TO-126-3 包装：剪切带（CT）带盒（TB） 描述：TRANS NPN 400V 2A SOT32-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

Bipolar Junction Transistor

FEATURES ● High voltage capability ● Features of good high temperature ● High switching speed APPLICATION Fluorescent Lamp、 Electronic Ballast、 Charger and Switch-mode power supplies

SMART DRIVER CONSTANT CURRENT

Description Smart Driver with Plug - Constant Current 950mA Selected - 2.4m cable & Wire By Click plug

good high temperature

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NPN Silicon Power Transistors

文件：332.95 Kbytes Page：3 Pages

Series 800 Vertisocket w/Collet Contacts for Horizontal Mounting

文件：703.96 Kbytes Page：1 Pages