Description

The device is manufactured using high voltage multi-epitaxial planar technology for high switching speeds and medium voltage capability.

It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA.

The device is designed for use in lighting applications and low cost switch-mode power supplies.

Features

■ Integrated antiparallel collector-emitter diode

■ High voltage capability

■ Minimum lot-to-lot spread for reliable operation

■ Very high switching speed

Applications

■ Electronic ballast for fluorescent lighting

■ Flyback and forward single transistor low power converters