LOW VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

DESCRIPTION The device is manufactured in NPN Planar Technology by using a Base Island layout. The resulting Transistor shows exceptional high gain performance coupled with very low saturation voltage. ■ VERY LOW COLLECTOR TO EMITTER SATURATION VOLTAGE ■ HIGH CURRENT GAIN CHARACTERISTIC ■ FAS

低压快速切换NPN功率晶体管

The device is manufactured in NPN Planar Technology by using a \\\"Base Island\\\" layout.\n\n The resulting Transistor shows exceptional high gain performance coupled with very low saturation voltage • VERY LOW COLLECTOR TO EMITTER SATURATION VOLTAGE \n• FAST-SWITCHING SPEED \n• HIGH CURRENT GAIN CHARACTERISTIC;

封装/外壳：TO-226-3，TO-92-3 标准主体（!--TO-226AA） 包装：散装 描述：TRANS NPN 60V 5A TO92-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

LOW VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

DESCRIPTION The device is manufactured in NPN Planar Technology by using a Base Island layout. The resulting Transistor shows exceptional high gain performance coupled with very low saturation voltage. ■ VERY LOW COLLECTOR TO EMITTER SATURATION VOLTAGE ■ HIGH CURRENT GAIN CHARACTERISTIC ■ FAS

封装/外壳：TO-226-3，TO-92-3（TO-226AA）成形引线 包装：散装 描述：TRANS NPN 60V 5A TO92AP 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

AM/FM-IF/MPX Tuner System for Radio-Casette Recorders, Music Centers

Overview The LA1805 is a characteristics-improved version of the LA1810, with the same pin assignment and package as those of the LA1810. Improvements are made on the following point : • Separation (35dB→48dB) and its dependence on free running frequency (Sep – fF Characteristic on page 4).

1.9 GHz POWER AMPLIFIER GaAs MONOLITHIC INTEGRATED CIRCUIT

This two–stage class AB monolithic GaAs amplifier in a low–cost 16 lead plastic package is designed for output or driver applications in 1.9 GHz PCS handsets and basestations. The design is optimized for 3.0 Volt operation in systems such as Japan’s PHS, Europe’s DECT and the emerging North Americ

Integrated Circuit Recording Video Signal Processing Circuit

Description: The NTE1805 is an integrated circuit in a 28–Lead DIP type package designed for use in VCR recording video signal processing. Features: • Dynamic Emphasis Characteristics: 5.5dB (at f = 1MHz, input level = –20dB) • Built–In Carrier Interleaving Circuit • Built–In Low

Low-Power BiCMOS Current-Mode PWM

文件：383.98 Kbytes Page：20 Pages

Low-Power BiCMOS Current-Mode PWM

文件：383.98 Kbytes Page：20 Pages