4 x 50 W MOSFET quad bridge power amplifier

Features  Multipower BCD technology  High output power capability: – 4 x 50 W/4 Ω Max. – 4 x 28 W/4 Ω @ 14.4 V, 1 kHz, 10 % – 4 x 72 W/2 Ω Max.  MOSFET output power stage  2 Ω driving capability  Hi-Fi class distortion  Low output noise  High immunity to RF noise injection 

4 x 50 W MOSFET quad bridge power amplifier

Features  Multipower BCD technology  High output power capability: – 4 x 50 W/4 Ω Max. – 4 x 28 W/4 Ω @ 14.4 V, 1 kHz, 10 % – 4 x 72 W/2 Ω Max.  MOSFET output power stage  2 Ω driving capability  Hi-Fi class distortion  Low output noise  High immunity to RF noise injection 

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