4 x 50 W MOSFET quad bridge power amplifier

Features  Multipower BCD technology  High output power capability: – 4 x 50 W/4 Ω Max. – 4 x 28 W/4 Ω @ 14.4 V, 1 kHz, 10 % – 4 x 72 W/2 Ω Max.  MOSFET output power stage  2 Ω driving capability  Hi-Fi class distortion  Low output noise  High immunity to RF noise injection 

4 x 50 W MOSFET quad bridge power amplifier

Features  Multipower BCD technology  High output power capability: – 4 x 50 W/4 Ω Max. – 4 x 28 W/4 Ω @ 14.4 V, 1 kHz, 10 % – 4 x 72 W/2 Ω Max.  MOSFET output power stage  2 Ω driving capability  Hi-Fi class distortion  Low output noise  High immunity to RF noise injection 

4 x 50 W MOSFET quad bridge power amplifier

Features  Multipower BCD technology  High output power capability: – 4 x 50 W/4 Ω Max. – 4 x 28 W/4 Ω @ 14.4 V, 1 kHz, 10 % – 4 x 72 W/2 Ω Max.  MOSFET output power stage  2 Ω driving capability  Hi-Fi class distortion  Low output noise  High immunity to RF noise injection 

4 x 50 W MOSFET quad bridge power amplifier

Features  Multipower BCD technology  High output power capability: – 4 x 50 W/4 Ω Max. – 4 x 28 W/4 Ω @ 14.4 V, 1 kHz, 10 % – 4 x 72 W/2 Ω Max.  MOSFET output power stage  2 Ω driving capability  Hi-Fi class distortion  Low output noise  High immunity to RF noise injection 

4 x 52 W quad bridge power amplifier with low voltage operation

Features  High output power capability: – 4 x 52 W/4 Ω max. – 4 x 30 W/4 Ω @ 14.4 V, 1 kHz, 10 % – 4 x 85 W/2 Ω max. – 4 x 55 W/2 Ω @ 14.4V, 1 kHz, 10 %  MOSFET output power stage  Stop-start and hybrid engines compliant  Excellent 2  driving capability  Hi-Fi class distorti

4 x 52 W quad bridge power amplifier with low voltage operation

Features  High output power capability: – 4 x 52 W/4 Ω max. – 4 x 30 W/4 Ω @ 14.4 V, 1 kHz, 10 % – 4 x 85 W/2 Ω max. – 4 x 55 W/2 Ω @ 14.4V, 1 kHz, 10 %  MOSFET output power stage  Stop-start and hybrid engines compliant  Excellent 2  driving capability  Hi-Fi class distorti

4 x 52 W quad bridge power amplifier with low voltage operation

Features  High output power capability: – 4 x 52 W/4 Ω max. – 4 x 30 W/4 Ω @ 14.4 V, 1 kHz, 10 % – 4 x 85 W/2 Ω max. – 4 x 55 W/2 Ω @ 14.4V, 1 kHz, 10 %  MOSFET output power stage  Stop-start and hybrid engines compliant  Excellent 2  driving capability  Hi-Fi class distorti

4 x 52 W quad bridge power amplifier with high side driver and low voltage operation

Features  High output power capability: – 4 x 52 W/4 Ω max. – 4 x 30 W/4 Ω @ 14.4 V, 1 kHz, 10 – 4 x 85 W/2 Ω max. – 4 x 55 W/2 Ω @ 14.4V, 1 kHz, 10  MOSFET output power stage  Capable to operate in low voltage conditions (e.g.: “Start - Stop”)  Excellent GSM noise immunity  Excel

4 x 52 W quad bridge power amplifier with high side driver and low voltage operation

Features  High output power capability: – 4 x 52 W/4 Ω max. – 4 x 30 W/4 Ω @ 14.4 V, 1 kHz, 10 – 4 x 85 W/2 Ω max. – 4 x 55 W/2 Ω @ 14.4V, 1 kHz, 10  MOSFET output power stage  Capable to operate in low voltage conditions (e.g.: “Start - Stop”)  Excellent GSM noise immunity  Excel

4 x 52 W quad bridge power amplifier with high side driver and low voltage operation

Features  High output power capability: – 4 x 52 W/4 Ω max. – 4 x 30 W/4 Ω @ 14.4 V, 1 kHz, 10 – 4 x 85 W/2 Ω max. – 4 x 55 W/2 Ω @ 14.4V, 1 kHz, 10  MOSFET output power stage  Capable to operate in low voltage conditions (e.g.: “Start - Stop”)  Excellent GSM noise immunity  Excel

4 x 52 W quad bridge power amplifier with high side driver and low voltage operation

Features  High output power capability: – 4 x 52 W/4 Ω max. – 4 x 30 W/4 Ω @ 14.4 V, 1 kHz, 10 – 4 x 85 W/2 Ω max. – 4 x 55 W/2 Ω @ 14.4V, 1 kHz, 10  MOSFET output power stage  Capable to operate in low voltage conditions (e.g.: “Start - Stop”)  Excellent GSM noise immunity  Excel

4 x 50 W MOSFET quad bridge power amplifier

Features  AEC-Q100 qualified  High output power capability: – 4 x 50 W/4 Ω Max. – 4 x 28 W/4 Ω @ 14.4 V, 1 kHz, 10 – 4 x 72 W/2 Ω Max.  MOSFET output power stage  2 Ω driving capability  Capable to operate down to 6 V (suitable for start-stop car operation)  Excellent GSM noise im

4 x 50 W MOSFET quad bridge power amplifier

Features  AEC-Q100 qualified  High output power capability: – 4 x 50 W/4 Ω Max. – 4 x 28 W/4 Ω @ 14.4 V, 1 kHz, 10 – 4 x 72 W/2 Ω Max.  MOSFET output power stage  2 Ω driving capability  Capable to operate down to 6 V (suitable for start-stop car operation)  Excellent GSM noise im

RF DETECTOR FOR POWER AMPLIFIER CONTROL

DESCRIPTION The STPAC01 is an integrated RF detector for the power control stage. It converts RF signal coming from the coupler into a DC signal usable by the digital stage. It is based on the use of two similar diodes, one providing the signal detection while the second one is used to provide

power amplifiers moving to the green zone

文件：2.40529 Mbytes Page：2 Pages

低压操作、高音质四路BTL输出功率放大器，支持待机和静音输入以及片段和偏移检测

power amplifiers moving to the green zone

文件：2.40529 Mbytes Page：2 Pages

低压操作高音质BTL输出功率放大器，具有出色的GSM抗噪性，支持片段和偏移检测

低压操作高音质BTL输出功率放大器，具有出色的GSM抗噪性，支持片段和偏移检测

4 x 50 W MOSFET quad bridge power amplifier

文件：598.83 Kbytes Page：29 Pages

4 x 50 W MOSFET quad bridge power amplifier

文件：598.83 Kbytes Page：29 Pages

4 x 50 W MOSFET quad bridge power amplifier

文件：598.83 Kbytes Page：29 Pages

4 x 50 W MOSFET quad bridge power amplifier

文件：598.83 Kbytes Page：29 Pages

SOLID STATE TELECOMMUNICATION PROTECTION ARRESTOR

文件：34.87 Kbytes Page：1 Pages

SOLID STATE TELECOMMUNICATION PROTECTION ARRESTOR

文件：34.87 Kbytes Page：1 Pages

TELECOMMUNICATION PROTECTION ARRESTORS

文件：1.7037 Mbytes Page：2 Pages

SOLID STATE TELECOMMUNICATION PROTECTION ARRESTOR

文件：34.87 Kbytes Page：1 Pages

TELECOMMUNICATION PROTECTION ARRESTORS

文件：1.7037 Mbytes Page：2 Pages

SOLID STATE TELECOMMUNICATION PROTECTION ARRESTOR

文件：34.87 Kbytes Page：1 Pages

TELECOMMUNICATION PROTECTION ARRESTORS

文件：1.7037 Mbytes Page：2 Pages

SOLID STATE TELECOMMUNICATION PROTECTION ARRESTOR

文件：34.87 Kbytes Page：1 Pages

TELECOMMUNICATION PROTECTION ARRESTORS

文件：1.7037 Mbytes Page：2 Pages

SOLID STATE TELECOMMUNICATION PROTECTION ARRESTOR

文件：34.87 Kbytes Page：1 Pages

SOLID STATE TELECOMMUNICATION PROTECTION ARRESTOR

文件：34.87 Kbytes Page：1 Pages

RF DETECTOR FOR POWER AMPLIFIER CONTROL

文件：66.87 Kbytes Page：7 Pages

IPAD TM, RF detector for power amplifier control

文件：96.16 Kbytes Page：7 Pages

封装/外壳：8-WFBGA，FCBGA 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：IC RF DETECT 800MHZ-1.9GHZ 8FLP RF/IF，射频/中频和 RFID 射频检测器

IPAD TM, RF detector for power amplifier control

文件：96.16 Kbytes Page：7 Pages

RF DETECTOR FOR POWER AMPLIFIER CONTROL WITH INTERNAL TEMPERATURE COMPENSATION IPADTM

文件：50.97 Kbytes Page：5 Pages

封装/外壳：8-WFBGA，FCBGA 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：IC RF DETECT 800MHZ-2.5GHZ 8FLP RF/IF，射频/中频和 RFID 射频检测器