N-channel 400 V, 0.73 廓 typ., 5.6 A MDmesh??II Power MOSFET in DPAK and TO-220 packages

Description These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitab

isc N-Channel MOSFET Transistor

FEATURES • Drain Current –ID= 22.4A@ TC=25℃ • Drain Source Voltage- : VDSS= 400V(Min) • Static Drain-Source On-Resistance : RDS(on) = 790mΩ (Max) • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • Switching

N-channel 400 V, 0.73 廓 typ., 5.6 A MDmesh??II Power MOSFET in DPAK and TO-220 packages

Description These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitab

isc N-Channel MOSFET Transistor

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