位置：首页 > IC中文资料第5469页 > STP9NC60
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
STP9NC60 | N - CHANNEL 600V - 0.6ohm - 9A TO-220/TO-220FP PowerMESHII MOSFET The PowerMESHII is the evolution of the first generation of MESH OVERLAY. The layout re finements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness. ■ TYPICAL RDS(on) = 0 | STMICROELECTRONICS 意法半导体 |   | |
STP9NC60 | isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 9 A@ TC=25℃ ·Drain Source Voltage -VDSS= 600V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.75Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. | ISC 无锡固电 | | |
STP9NC60 | N-Channel 650V (D-S) Power MOSFET 文件：1.10766 Mbytes Page：10 Pages | VBSEMI 微碧半导体 | | |
N - CHANNEL 600V - 0.6ohm - 9A TO-220/TO-220FP PowerMESHII MOSFET The PowerMESHII is the evolution of the first generation of MESH OVERLAY. The layout re finements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness. ■ TYPICAL RDS(on) = 0 | STMICROELECTRONICS 意法半导体 | | ||
N - CHANNEL 600V - 0.6ohm - 9A TO-220/TO-220FP PowerMESHII MOSFET | STMICROELECTRONICS 意法半导体 | | ||
N-CHANNEL 600V - 0.6ohm - 9A - D2PAK/I2PAK PowerMesh?줚I MOSFET DESCRIPTION The PowerMESH™II is the evolution of the first generation of MESH OVERLAY™. The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness. ■ TYPICAL RDS(on | STMICROELECTRONICS 意法半导体 | | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 9 A@ TC=25℃ ·Drain Source Voltage -VDSS= 600V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.75Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. | ISC 无锡固电 | | ||
N-CHANNEL 600V - 0.6ohm - 9A - D2PAK/I2PAK PowerMesh?줚I MOSFET DESCRIPTION The PowerMESH™II is the evolution of the first generation of MESH OVERLAY™. The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness. ■ TYPICAL RDS(on | STMICROELECTRONICS 意法半导体 | | ||
N-Channel 650V (D-S) Power MOSFET 文件：1.10566 Mbytes Page：10 Pages | VBSEMI 微碧半导体 | | ||
N-Channel 650V (D-S) Power MOSFET 文件：1.10576 Mbytes Page：10 Pages | VBSEMI 微碧半导体 | |
STP9NC60产品属性
- 类型
描述
- 型号
STP9NC60
- 制造商
STMICROELECTRONICS
- 制造商全称
STMicroelectronics
- 功能描述
N - CHANNEL 600V - 0.6ohm - 9A TO-220/TO-220FP PowerMESHII MOSFET
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST/意法 |
24+ |
NA/ |
3987 |
原厂直销,现货供应,账期支持! |
|||
ST |
2016+ |
TO-220F |
3500 |
只做原装,假一罚十,公司可开17%增值税发票! |
|||
ST/意法 |
25+ |
TO220 |
54648 |
百分百原装现货 实单必成 欢迎询价 |
|||
ST-MICROELECTRONICS |
24+ |
NA |
990000 |
明嘉莱只做原装正品现货 |
|||
ST |
20+ |
TO-220 |
38560 |
原装优势主营型号-可开原型号增税票 |
|||
ST |
23+ |
TO-220 |
15000 |
专做原装正品,假一罚百! |
|||
ST |
25+23+ |
TO-220 |
27405 |
绝对原装正品全新进口深圳现货 |
|||
ST/意法 |
2450+ |
TO-220F |
9850 |
只做原装正品现货或订货假一赔十! |
|||
ST |
2025+ |
TO-220 |
5185 |
全新原厂原装产品、公司现货销售 |
|||
ST |
23+ |
TO-220 |
16900 |
正规渠道,只有原装! |
STP9NC60规格书下载地址
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STP9NC60数据表相关新闻
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