位置:首页 > IC中文资料 > 9NC60

型号 功能描述 生产厂家 企业 LOGO 操作
9NC60

N-Channel 650V (D-S) Power MOSFET

文件:1.10566 Mbytes Page:10 Pages

VBSEMI

微碧半导体

N-CHANNEL 600V - 0.6ohm - 9A - D2PAK/I2PAK PowerMesh?줚I MOSFET

DESCRIPTION The PowerMESH™II is the evolution of the first generation of MESH OVERLAY™. The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness. ■ TYPICAL RDS(on

STMICROELECTRONICS

意法半导体

N-CHANNEL 600V - 0.6ohm - 9A - D2PAK/I2PAK PowerMesh?줚I MOSFET

DESCRIPTION The PowerMESH™II is the evolution of the first generation of MESH OVERLAY™. The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness. ■ TYPICAL RDS(on

STMICROELECTRONICS

意法半导体

N - CHANNEL 600V - 0.6ohm - 9A TO-220/TO-220FP PowerMESHII MOSFET

The PowerMESHII is the evolution of the first generation of MESH OVERLAY. The layout re finements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness. ■ TYPICAL RDS(on) = 0

STMICROELECTRONICS

意法半导体

N - CHANNEL 600V - 0.6ohm - 9A TO-220/TO-220FP PowerMESHII MOSFET

The PowerMESHII is the evolution of the first generation of MESH OVERLAY. The layout re finements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness. ■ TYPICAL RDS(on) = 0

STMICROELECTRONICS

意法半导体

更新时间:2026-5-22 18:23:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ST
2511
TO-220F
16900
电子元器件采购降本30%!原厂直采,砍掉中间差价
ST
23+
TO-220F
16900
正规渠道,只有原装!
ST
25+
TO-220F
20000
原装,请咨询
ST
25+
TO-220F
20000
原装
ST
26+
TO-220F
60000
只有原装 可配单

9NC60数据表相关新闻