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STP9N60M2价格
参考价格：￥5.0281
型号：STP9N60M2 品牌：STMicroelectronics 备注：这里有STP9N60M2多少钱，2025年最近7天走势，今日出价，今日竞价，STP9N60M2批发/采购报价，STP9N60M2行情走势销售排行榜，STP9N60M2报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
STP9N60M2 | Extremely low gate charge Description These devices are N-channel Power MOSFETs developed using a new generation of MDmesh™ technology: MDmesh II Plus™ low Qg. These revolutionary Power MOSFETs associate a vertical structure to the companys strip layout to yield one of the worlds lowest on-resistance and gate charge. They | STMICROELECTRONICS 意法半导体 |   | |
STP9N60M2 | isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 5.5A@ TC=25℃ ·Drain Source Voltage -VDSS= 600V(Min) ·Static Drain-Source On-Resistance -RDS(on) =0.78Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. | ISC 无锡固电 | | |
STP9N60M2 | N-Channel 650V (D-S) Power MOSFET 文件：1.10861 Mbytes Page：10 Pages | VBSEMI 微碧半导体 | | |
STP9N60M2 | N沟道600 V、0.72 Ohm典型值、5.5 A MDmesh M2功率MOSFET，TO-220封装 | STMICROELECTRONICS 意法半导体 | | |
isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 5.5A@ TC=25℃ ·Drain Source Voltage -VDSS= 600V(Min) ·Static Drain-Source On-Resistance -RDS(on) =0.78Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. | ISC 无锡固电 | | ||
Extremely low gate charge Description These devices are N-channel Power MOSFETs developed using a new generation of MDmesh™ technology: MDmesh II Plus™ low Qg. These revolutionary Power MOSFETs associate a vertical structure to the companys strip layout to yield one of the worlds lowest on-resistance and gate charge. They | STMICROELECTRONICS 意法半导体 | | ||
N-channel 600 V, 0.72 ??typ., 5.5 A MDmesh II Plus??low Qg Power MOSFETs in TO-220FP and I2PAKFP packages Description These devices are N-channel Power MOSFETs developed using a new generation of MDmesh™ technology: MDmesh II Plus™ low Qg. These revolutionary Power MOSFETs associate a vertical structure to the companys strip layout to yield one of the worlds lowest on-resistance and gate charge. They | STMICROELECTRONICS 意法半导体 | | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 5.5A@ TC=25℃ ·Drain Source Voltage -VDSS= 600V(Min) -RDS(on) = 0.78Ω(Max)@VGS= 10V APPLICATION ·Motor drive, DC-DC converter, power switch and solenoid drive. | ISC 无锡固电 | | ||
N-Channel 650V (D-S) Power MOSFET 文件：1.1057 Mbytes Page：10 Pages | VBSEMI 微碧半导体 | |
STP9N60M2产品属性
- 类型
描述
- 型号
STP9N60M2
- 制造商
STMicroelectronics
- 功能描述
POWER MOSFET - Rail/Tube
- 制造商
STMicroelectronics
- 功能描述
MOSFET N-CH 600V 5.5A TO-220
- 制造商
STMicroelectronics
- 功能描述
STP9N60M2 Series 600 V 5.5 A 0.78 Ohm N-channel Power MOSFET - TO-220-3
- 制造商
STMicroelectronics
- 功能描述
MOSFET N-Ch 600V 5.5A MDmesh II TO-220
- 制造商
STMicroelectronics
- 功能描述
MOSFET N-Channel 600V 5.5A TO-220
- 制造商
STMicroelectronics
- 功能描述
600V,0.72,5.5A,N-Channel Power MOSFET
- 制造商
STMicroelectronics
- 功能描述
N-channel 600V,0.72Ohm,5.5A Power MOSFET
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST/意法半导体 |
21+ |
TO-220-3 |
8860 |
只做原装,质量保证 |
|||
ST(意法半导体) |
24+ |
TO-220 |
7828 |
支持大陆交货,美金交易。原装现货库存。 |
|||
ST |
17+ |
TO220 |
6200 |
100%原装正品现货 |
|||
ST |
24+ |
N/A |
8000 |
全新原装正品,现货销售 |
|||
ST/意法 |
25+ |
TO220 |
860000 |
明嘉莱只做原装正品现货 |
|||
ST/意法半导体 |
25+ |
原厂封装 |
10280 |
原厂授权代理,专注军工、汽车、医疗、工业、新能源！ |
|||
ST/意法半导体 |
23+ |
TO-220-3 |
16900 |
公司只做原装，可来电咨询 |
|||
三年内 |
1983 |
只做原装正品 |
|||||
ST |
2447 |
SMD |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
ST/意法半导体 |
24+ |
TO-220-3 |
16960 |
原装正品现货支持实单 |
STP9N60M2规格书下载地址
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