N-CHANNEL 500V - 0.7ohm - 8A TO-220/TO-220FP MDmesh?줡ower MOSFET

Description The MDmesh™ is a new revolutionary Power MOSFET technology that associates the multiple drain process with the company’s PowerMESH™ horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adopt

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 5.0A@ TC=25℃ ·Drain Source Voltage -VDSS= 500V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.8Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

N-Channel 650V (D-S) Power MOSFET

文件：1.10765 Mbytes Page：10 Pages

N-channel 550V @ Tjmax - 0.7廓 - 8A - TO-220 - TO-220FP MDmesh??Power MOSFET

文件：288.89 Kbytes Page：14 Pages

N-CHANNEL 500V - 0.7ohm - 8A TO-220/TO-220FP MDmesh?줡ower MOSFET

Description The MDmesh™ is a new revolutionary Power MOSFET technology that associates the multiple drain process with the company’s PowerMESH™ horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adopt

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 5.0A@ TC=25℃ ·Drain Source Voltage -VDSS= 500V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.8Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

isc N-Channel MOSFET Transistor

FEATURES • Drain Current –ID= 5A@ TC=25℃ • Drain Source Voltage- : VDSS= 500V(Min) • Static Drain-Source On-Resistance : RDS(on) = 790mΩ (Max) • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • Switching app

N-channel 500 V, 0.73 廓 typ., 5 A MDmesh?줚I Power MOSFET in DPAK, TO-220 and IPAK packages

Description These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitab

N-channel 550V @ Tjmax - 0.7廓 - 8A - TO-220 - TO-220FP MDmesh??Power MOSFET

文件：288.89 Kbytes Page：14 Pages

N-channel 550V @ Tjmax - 0.7廓 - 8A - TO-220 - TO-220FP MDmesh??Power MOSFET

文件：288.89 Kbytes Page：14 Pages

N-channel 500 V, 0.73 Ohm typ., 5 A MDmesh II Power MOSFET in DPAK, TO-220 and IPAK packages

文件：1.16474 Mbytes Page：19 Pages

N-channel 500 V, 0.73 廓 typ., 5 A MDmesh?줚I Power MOSFET in DPAK, TO-220 and IPAK packages

Description These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitab

N-channel 550V @ Tjmax - 0.7廓 - 8A - TO-220 - TO-220FP MDmesh??Power MOSFET

文件：288.89 Kbytes Page：14 Pages

isc N-Channel MOSFET Transistor

文件：324.1 Kbytes Page：2 Pages

N-channel 500 V, 0.73 Ohm typ., 5 A MDmesh II Power MOSFET in DPAK, TO-220 and IPAK packages

文件：1.16474 Mbytes Page：19 Pages

N-channel 500 V, 0.73 Ohm typ., 5 A MDmesh II Power MOSFET in DPAK, TO-220 and IPAK packages

文件：1.16474 Mbytes Page：19 Pages