型号 功能描述 生产厂家&企业 LOGO 操作
STP8NK85Z

N-CHANNEL850V-1.1ohm-6.7ATO-220/TO-220FPZener-ProtectedSuperMESHMOSFET

Description TheSuperMESH™seriesisobtainedthroughanextremeoptimizationofST’swellestablishedstrip-basedPowerMESH™layout.Inadditiontopushingon-resistancesignificantlydown,specialcareistakentoensureaverygooddv/dtcapabilityforthemostdemandingapplications.Suchser

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

N-CHANNEL850V-1.1ohm-6.7ATO-220/TO-220FPZener-ProtectedSuperMESHMOSFET

Description TheSuperMESH™seriesisobtainedthroughanextremeoptimizationofST’swellestablishedstrip-basedPowerMESH™layout.Inadditiontopushingon-resistancesignificantlydown,specialcareistakentoensureaverygooddv/dtcapabilityforthemostdemandingapplications.Suchser

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

N-CHANNEL850V-1.1ohm-6.7ATO-220/TO-220FPZener-ProtectedSuperMESHMOSFET

Description TheSuperMESH™seriesisobtainedthroughanextremeoptimizationofST’swellestablishedstrip-basedPowerMESH™layout.Inadditiontopushingon-resistancesignificantlydown,specialcareistakentoensureaverygooddv/dtcapabilityforthemostdemandingapplications.Suchser

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

STP8NK85Z产品属性

  • 类型

    描述

  • 型号

    STP8NK85Z

  • 功能描述

    MOSFET SuperMESH MOSFET

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS(导通)

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

更新时间:2024-6-17 8:56:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
VB
2019
TO-220
55000
绝对原装正品假一罚十!
ST/意法
22+
TO220ABNONISOL
97941
ST
17+
TO-220
6200
ST/意法
22+
TO220ABNONISOL
97941
终端免费提供样品 可开13%增值税发票
ST
16+
TO-220-3(直引
496
原装现货假一罚十
ST
TO-220
93480
集团化配单-有更多数量-免费送样-原包装正品现货-正规
ST-意法半导体
24+25+/26+27+
TO-220-3
78800
一一有问必回一特殊渠道一有长期订货一备货HK仓库
ST
23+
TOTO-220ABNONISOL
33500
全新原装真实库存含13点增值税票!
ST
07+/08+
TO-220-3
496
ST/意法
22+
N
28000
原装现货只有原装.假一罚十

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