位置：首页 > IC中文资料第1219页 > STP5NB60
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
STP5NB60 | isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 5.0A@ TC=25℃ ·Drain Source Voltage -VDSS=600V(Min) ·Static Drain-Source On-Resistance； -RDS(on) = 2.0Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. | ISC 无锡固电 |   | |
STP5NB60 | N - CHANNEL 600V - 1.8ohm - 5A - TO-220/TO-220FP PowerMESH MOSFET DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per a | STMICROELECTRONICS 意法半导体 | | |
STP5NB60 | N-Channel 650 V (D-S) MOSFET 文件：1.09028 Mbytes Page：9 Pages | VBSEMI 微碧半导体 | | |
STP5NB60 | N - CHANNEL 600V - 1.8ohm - 5A - TO-220/TO-220FP PowerMESH MOSFET | STMICROELECTRONICS 意法半导体 | | |
N - CHANNEL 600V - 1.8ohm - 5A - TO-220/TO-220FP PowerMESH MOSFET DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per a | STMICROELECTRONICS 意法半导体 | | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 3.0A@ TC=25℃ ·Drain Source Voltage -VDSS=600V(Min) ·Static Drain-Source On-Resistance； -RDS(on) = 2.0Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. | ISC 无锡固电 | | ||
N - CHANNEL 600V - 1.8ohm - 5A - TO-220/TO-220FP PowerMESH MOSFET DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per a | STMICROELECTRONICS 意法半导体 | | ||
N - CHANNEL 600V - 1.8ohm - 5A - I2PAK/D2PAK PowerMESH MOSFET DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per a | STMICROELECTRONICS 意法半导体 | |
STP5NB60产品属性
- 类型
描述
- 型号
STP5NB60
- 功能描述
MOSFET RO 511-STP4NK60Z
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST |
25+23+ |
TO-220 |
15200 |
绝对原装正品全新进口深圳现货 |
|||
ST/意法 |
24+ |
NA/ |
3504 |
原厂直销,现货供应,账期支持! |
|||
ST/意法 |
25+ |
TO-220 |
57488 |
百分百原装现货 实单必成 欢迎询价 |
|||
ST/意法 |
2450+ |
TO-220 |
9850 |
只做原装正品现货或订货假一赔十! |
|||
ST |
25+ |
263 |
公司优势库存 热卖中! |
||||
ST |
23+ |
TO-220 |
16900 |
正规渠道,只有原装! |
|||
ST |
17+ |
TO-220 |
6200 |
||||
ST |
24+ |
TO-220 |
3000 |
||||
ST |
2447 |
TO-220 |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
ST |
24+ |
TO-220F |
5000 |
原装现货热卖 |
STP5NB60规格书下载地址
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DdatasheetPDF页码索引
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