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| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
STP5NB60 | N-CHANNEL600V-1.8ohm-5A-TO-220/TO-220FPPowerMESHMOSFET DESCRIPTION UsingthelatesthighvoltageMESHOVERLAY™process,STMicroelectronicshasdesignedanadvancedfamilyofpowerMOSFETswithoutstandingperformances.ThenewpatentpendingstriplayoutcoupledwiththeCompany’sproprietaryedgeterminationstructure,givesthelowestRDS(on)pera | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 |  |   |
STP5NB60 | iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=5.0A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance； -RDS(on)=2.0Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |  | |
STP5NB60 | N-Channel650V(D-S)MOSFET 文件：1.09028 Mbytes Page：9 Pages | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司 |  | |
N-CHANNEL600V-1.8ohm-5A-TO-220/TO-220FPPowerMESHMOSFET DESCRIPTION UsingthelatesthighvoltageMESHOVERLAY™process,STMicroelectronicshasdesignedanadvancedfamilyofpowerMOSFETswithoutstandingperformances.ThenewpatentpendingstriplayoutcoupledwiththeCompany’sproprietaryedgeterminationstructure,givesthelowestRDS(on)pera | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=3.0A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance； -RDS(on)=2.0Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
N-CHANNEL600V-1.8ohm-5A-TO-220/TO-220FPPowerMESHMOSFET DESCRIPTION UsingthelatesthighvoltageMESHOVERLAY™process,STMicroelectronicshasdesignedanadvancedfamilyofpowerMOSFETswithoutstandingperformances.ThenewpatentpendingstriplayoutcoupledwiththeCompany’sproprietaryedgeterminationstructure,givesthelowestRDS(on)pera | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | | |
N-CHANNEL600V-1.8ohm-5A-I2PAK/D2PAKPowerMESHMOSFET DESCRIPTION UsingthelatesthighvoltageMESHOVERLAY™process,STMicroelectronicshasdesignedanadvancedfamilyofpowerMOSFETswithoutstandingperformances.ThenewpatentpendingstriplayoutcoupledwiththeCompany’sproprietaryedgeterminationstructure,givesthelowestRDS(on)pera | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体集团 | | |
STP5NB60产品属性
- 类型
描述
- 型号
STP5NB60
- 功能描述
MOSFET RO 511-STP4NK60Z
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST/意法 |
2023+ |
TO-220 |
6893 |
十五年行业诚信经营,专注全新正品 |
|||
ST/意法 |
22+ |
TO-220 |
20000 |
原装现货,实单支持 |
|||
ST |
24+ |
TO-220 |
5000 |
原装现货热卖 |
|||
ST/意法 |
23+ |
TO-220 |
8160 |
原厂原装 |
|||
ST |
17+ |
TO-220 |
6200 |
||||
ST |
23+ |
TO-220 |
16900 |
正规渠道,只有原装! |
|||
ST/意法 |
25+ |
TO-220 |
32360 |
ST/意法全新特价STP5NB60即刻询购立享优惠#长期有货 |
|||
ST |
06+ |
TO-220 |
10000 |
全新原装 绝对有货 |
|||
VBsemi |
21+ |
TO220 |
10026 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
ST/意法 |
25+ |
TO-220 |
57488 |
百分百原装现货 实单必成 欢迎询价 |
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STP5NB60规格书下载地址
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DdatasheetPDF页码索引
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