位置：首页 > IC中文资料第1219页 > STP5NB60
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
STP5NB60 | isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 5.0A@ TC=25℃ ·Drain Source Voltage -VDSS=600V(Min) ·Static Drain-Source On-Resistance； -RDS(on) = 2.0Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. | ISC 无锡固电 |   | |
STP5NB60 | N - CHANNEL 600V - 1.8ohm - 5A - TO-220/TO-220FP PowerMESH MOSFET DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per a | STMICROELECTRONICS 意法半导体 | | |
STP5NB60 | N-Channel 650 V (D-S) MOSFET 文件：1.09028 Mbytes Page：9 Pages | VBSEMI 微碧半导体 | | |
STP5NB60 | N - CHANNEL 600V - 1.8ohm - 5A - TO-220/TO-220FP PowerMESH MOSFET | STMICROELECTRONICS 意法半导体 | | |
N - CHANNEL 600V - 1.8ohm - 5A - TO-220/TO-220FP PowerMESH MOSFET DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per a | STMICROELECTRONICS 意法半导体 | | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 3.0A@ TC=25℃ ·Drain Source Voltage -VDSS=600V(Min) ·Static Drain-Source On-Resistance； -RDS(on) = 2.0Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. | ISC 无锡固电 | | ||
N - CHANNEL 600V - 1.8ohm - 5A - TO-220/TO-220FP PowerMESH MOSFET DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per a | STMICROELECTRONICS 意法半导体 | | ||
N - CHANNEL 600V - 1.8ohm - 5A - I2PAK/D2PAK PowerMESH MOSFET DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per a | STMICROELECTRONICS 意法半导体 | |
STP5NB60产品属性
- 类型
描述
- 型号
STP5NB60
- 功能描述
MOSFET RO 511-STP4NK60Z
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST/意法 |
24+ |
NA/ |
3504 |
原厂直销,现货供应,账期支持! |
|||
ST |
2016+ |
TO-220 |
3500 |
只做原装,假一罚十,公司可开17%增值税发票! |
|||
ST |
NEW |
TO-220 |
18689 |
代理全系列销售, 全新原装正品,价格优势,长期供应,量大可订 |
|||
ST/意法 |
2023+ |
TO-220 |
6893 |
十五年行业诚信经营,专注全新正品 |
|||
ST |
25+23+ |
TO-220 |
15200 |
绝对原装正品全新进口深圳现货 |
|||
ST/意法 |
25+ |
TO-220 |
57488 |
百分百原装现货 实单必成 欢迎询价 |
|||
ST/意法 |
2450+ |
TO-220 |
9850 |
只做原装正品现货或订货假一赔十! |
|||
ST |
25+ |
263 |
公司优势库存 热卖中! |
||||
ST |
23+ |
TO-220 |
16900 |
正规渠道,只有原装! |
|||
ST |
17+ |
TO-220 |
6200 |
STP5NB60规格书下载地址
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