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| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
STP5NB60 | isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 5.0A@ TC=25℃ ·Drain Source Voltage -VDSS=600V(Min) ·Static Drain-Source On-Resistance； -RDS(on) = 2.0Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. | ISC 无锡固电 |   | |
STP5NB60 | N - CHANNEL 600V - 1.8ohm - 5A - TO-220/TO-220FP PowerMESH MOSFET DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per a | STMICROELECTRONICS 意法半导体 | | |
STP5NB60 | N-Channel 650 V (D-S) MOSFET 文件：1.09028 Mbytes Page：9 Pages | VBSEMI 微碧半导体 | | |
STP5NB60 | N - CHANNEL 600V - 1.8ohm - 5A - TO-220/TO-220FP PowerMESH MOSFET | STMICROELECTRONICS 意法半导体 | | |
N - CHANNEL 600V - 1.8ohm - 5A - TO-220/TO-220FP PowerMESH MOSFET DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per a | STMICROELECTRONICS 意法半导体 | | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 3.0A@ TC=25℃ ·Drain Source Voltage -VDSS=600V(Min) ·Static Drain-Source On-Resistance； -RDS(on) = 2.0Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. | ISC 无锡固电 | | ||
N - CHANNEL 600V - 1.8ohm - 5A - TO-220/TO-220FP PowerMESH MOSFET DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per a | STMICROELECTRONICS 意法半导体 | | ||
N - CHANNEL 600V - 1.8ohm - 5A - I2PAK/D2PAK PowerMESH MOSFET DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per a | STMICROELECTRONICS 意法半导体 | |
STP5NB60产品属性
- 类型
描述
- 型号
STP5NB60
- 功能描述
MOSFET RO 511-STP4NK60Z
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST |
2511 |
TO-220 |
16900 |
电子元器件采购降本 30%!盈慧通原厂直采,砍掉中间差价 |
|||
ST |
06+ |
TO-220 |
10000 |
全新原装 绝对有货 |
|||
SST |
原厂封装 |
9800 |
原装进口公司现货假一赔百 |
||||
ST/意法 |
25+ |
TO-220 |
32360 |
ST/意法全新特价STP5NB60即刻询购立享优惠#长期有货 |
|||
ST/意法 |
2450+ |
TO-220 |
9850 |
只做原装正品现货或订货假一赔十! |
|||
ST |
NEW |
TO-220 |
18689 |
代理全系列销售, 全新原装正品,价格优势,长期供应,量大可订 |
|||
ST/意法 |
25+ |
TO-220 |
57488 |
百分百原装现货 实单必成 欢迎询价 |
|||
ST |
25+ |
TO-220 |
16900 |
原装，请咨询 |
|||
VBsemi |
21+ |
TO220 |
10026 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
ST |
25+23+ |
TO-220 |
15200 |
绝对原装正品全新进口深圳现货 |
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STP5NB60规格书下载地址
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DdatasheetPDF页码索引
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