isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 3.0A@ TC=25℃ ·Drain Source Voltage -VDSS=800V(Min) ·Static Drain-Source On-Resistance； -RDS(on) = 2.5Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

N-channel 800 V, 2.1 ??typ., 3 A MDmesh??K5 Power MOSFETs in DPAK, TO-220FP, TO-220 and IPAK packages

Description These very high voltage N-channel Power MOSFETs are designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high effi

N沟道800 V、2.1 Ohm典型值、3 A MDmesh K5功率MOSFET，TO-220封装

N-Channel Power MOSFET

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4.0 Amps, 800 Volts N-CHANNEL POWER MOSFET

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4.0A, 800V N-CHANNEL POWER MOSFET

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Fast Switching Speed

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isc N-Channel MOSFET Transistor

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