N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

■ TYPICAL Ros(on) = 0.0352 ■ AVALANCHE RUGGED TECHNOLOGY ■ 100 AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATA AT 100°C ■ LOW GATE CHARGE ■ HIGH CURRENT CAPABILITY ■ 175°C OPERATING TEMPERATURE ■ APPLICATION ORIENTED CHARACTERIZATION APPLICATIONS ■ HIGH CURRENT, HIGH SPEED SWITCHING ■ SO

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

■ TYPICAL Ros(on) = 0.0352 ■ AVALANCHE RUGGED TECHNOLOGY ■ 100 AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATA AT 100°C ■ LOW GATE CHARGE ■ HIGH CURRENT CAPABILITY ■ 175°C OPERATING TEMPERATURE ■ APPLICATION ORIENTED CHARACTERIZATION APPLICATIONS ■ HIGH CURRENT, HIGH SPEED SWITCHING ■ SO

40A mps,100 Volts N-CHANNEL MOSFET

FEATURE ● 40A, 100V, RDS(ON) = 40mΩ @VGS=10V/20A ● Low gate charge ● Low Ciss ● Fast switching ● 100 avalanche tested ● Improved dv/dt capability

Fast Switching

FEATURES • Drain Current ID= 40A@ TC=25℃ • Drain Source Voltage- : VDSS= 100V(Min) • Static Drain-Source On-Resistance : RDS(on) = 0.04Ω(Max) • Fast Switching APPLICATIONS • Switching power supplies,converters, AC and DC motor controls

40A mps,100 Volts N-CHANNEL MOSFET

FEATURE ● 40A, 100V, RDS(ON) = 40mΩ @VGS=10V/20A ● Low gate charge ● Low Ciss ● Fast switching ● 100 avalanche tested ● Improved dv/dt capability

40A mps,100 Volts N-CHANNEL MOSFET

FEATURE ● 40A, 100V, RDS(ON) = 40mΩ @VGS=10V/20A ● Low gate charge ● Low Ciss ● Fast switching ● 100 avalanche tested ● Improved dv/dt capability

N-Channel 100-V (D-S) MOSFET

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