isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 2.8A@ TC=25℃ ·Drain Source Voltage -VDSS= 500V(Min) ·Static Drain-Source On-Resistance； -RDS(on) = 4.0Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

N-CHANNEL 500V - 3ohm - 2.8A TO-220 PowerMesh?줚I MOSFET

DESCRIPTION The PowerMESH™II is the evolution of the first generation of MESH OVERLAY™. The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness. ■ TYPICAL RDS(on) = 3

N-CHANNEL 500V - 3ohm - 2.8A TO-220 PowerMesh™II MOSFET

N - CHANNEL 500V - 2.4ohm - 3A TO-251/TO-252 PowerMESHII MOSFET

DESCRIPTION The PowerMESH ΙΙ is the evolution of the first generation of MESH OVERLAY™. The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns switching speed, gate charge and ruggedness. ■ TYPICAL RDS(on) =

Power MOSFET

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