TMOS POWER FET 3.0 AMPERES 500 VOLTS RDS(on) = 3.0 OHMS

TMOS E-FET™ High Energy Power FET N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 3.0 AMPERES 500 VOLTS RDS(on)= 3.0 OHMS This advanced high voltageTMOS E–FET is designed to with stand high energy in the avalanche mode and switch efficiently. Thisnew high energy device also offer

PowerMOS transistors Avalanche energy rated

GENERAL DESCRIPTION N-channel, enhancement mode field-effect power transistor, intended for use in off-line switched mode power supplies, T.V. and computer monitor power supplies, d.c. to d.c. converters, motor control circuits and general purpose switching applications. The PHP3N50E is supplied

PowerMOS transistor

GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope featuring high avalanche energy capability, stable off-state characteristics, fast switching and high thermal cycling performance with low thermal resistance. Intended for use in Switched Mode Power

PowerMOS transistors Avalanche energy rated

GENERAL DESCRIPTION N-channel, enhancement mode field-effect power transistor, intended for use in off-line switched mode power supplies, T.V. and computer monitor power supplies, d.c. to d.c. converters, motor control circuits and general purpose switching applications. The PHP3N50E is supplied

PowerMOS transistors Avalanche energy rated

GENERAL DESCRIPTION N-channel, enhancement mode field-effect power transistor, intended for use in off-line switched mode power supplies, T.V. and computer monitor power supplies, d.c. to d.c. converters, motorcontrol circuits and general purpose switching applications. The PHX3N50E is supplied