TMOS POWER FET 3.0 AMPERES 500 VOLTS RDS(on) = 3.0 OHMS

TMOS E-FET™ High Energy Power FET N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 3.0 AMPERES 500 VOLTS RDS(on)= 3.0 OHMS This advanced high voltageTMOS E–FET is designed to with stand high energy in the avalanche mode and switch efficiently. Thisnew high energy device also offer

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 3A@ TC=25℃ ·Drain Source Voltage -VDSS= 450V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 3Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

N-Channel 650 V (D-S) MOSFET

文件：1.08664 Mbytes Page：9 Pages

TMOS POWER FET 3.0 AMPERES 500 VOLTS RDS(on) = 3.0 OHMS

TMOS E-FET™ High Energy Power FET N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 3.0 AMPERES 500 VOLTS RDS(on)= 3.0 OHMS This advanced high voltageTMOS E–FET is designed to with stand high energy in the avalanche mode and switch efficiently. Thisnew high energy device also offer

N?묬hannel Enhancement?묺ode Silicon Gate

文件：236.02 Kbytes Page：8 Pages

isc N-Channel MOSFET Transistor

文件：317.2 Kbytes Page：2 Pages

TMOS POWER FET 3.0 AMPERES 500 VOLTS RDS(on) = 3.0 OHMS

Trans MOSFET N-CH 500V 3A 3-Pin(3+Tab) TO-220AB

N−Channel Enhancement−Mode Silicon Gate

Fast Switching

• FEATURES • Drain Current ID= 3A@ TC=25℃ • Drain Source Voltage- : VDSS= 500V(Min) • Static Drain-Source On-Resistance : RDS(on) = 3.0Ω (Max) • Fast Switching • APPLICATIONS • Switching power supplies,converters,AC and DC motor controls

N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR

DESCRIPTION The UTC 3N50K-MK is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in the avala

N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR

DESCRIPTION The UTC 3N50K-MK is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in the avala

3A, 500V N-CHANNEL POWER MOSFET

文件：181.85 Kbytes Page：6 Pages

3 Amps, 500 Volts N-CHANNEL POWER MOSFET

文件：173.79 Kbytes Page：6 Pages