isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 26A@ TC=25℃ ·Drain Source Voltage -VDSS= 100V(Min) ·Static Drain-Source On-Resistance； -RDS(on) = 60mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

N - CHANNEL 100V - 0.07ohm - 24A TO-220 LOW GATE CHARGE STripFET POWER MOSFET

Description This Power MOSFET series realized with STMicroelectronics unique STripFET™ process has specifically been designed to minimize the on-resistance. It is therefore suitable as primary switch in advanced high-efficiency,high-frequency isolated DC-DC converters for Telecom and Computer app

N沟道100V - 0.055 Ohm - 26A - TO-220低栅极电荷StripFET(TM) II功率MOSFET

This Power MOSFET series realized with STMicroelectronics unique STripFET™ process has specifically been designed to minimize the on-resistance. It is therefore suitable as primary switch in advanced high-efficiency,high-frequency isolated DC-DC converters for Telecom and Computer application. It is • Exceptional dv/dt capability \n• Application oriented characterization \n• 100% avalanche tested;

N-channel 100V - 0.0055OHM - 26A - TO-220 - D2PAK Low gate charge STripFET TM II Power MOSFET

文件：421.46 Kbytes Page：14 Pages

N-Channel 100-V (D-S) MOSFET

文件：939.14 Kbytes Page：7 Pages

N - CHANNEL 30V - 0.034ohm - 22A TO-263 STripFET] POWER MOSFET

Description This Power MOSFET series realized with STMicroelectronics unique STripFET™ process has specifically been designed to minimize the on-resistance. It is therefore suitable as primary switch in advanced high-efficiency,high-frequency isolated DC-DC converters for Telecom and Computer app

N-channel 100V - 0.0055OHM - 26A - TO-220 - D2PAK Low gate charge STripFET TM II Power MOSFET

文件：421.46 Kbytes Page：14 Pages

N-channel 100V - 0.0055OHM - 26A - TO-220 - D2PAK Low gate charge STripFET TM II Power MOSFET

文件：421.46 Kbytes Page：14 Pages

N-channel 100V - 0.0055OHM - 26A - TO-220 - D2PAK Low gate charge STripFET TM II Power MOSFET

文件：421.46 Kbytes Page：14 Pages