N-CHANNEL 60V - 0.08 ohm - 16A TO-220/TO-220FP STripFET??II POWER MOSFET

Description This Power MOSFET is the latest development of STMicroelectronics unique Single Feature Size™ strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remark

N沟道60V - 0.08Ohm - 16A - TO-220 StripFET(TM) II功率MOSFET

This Power MOSFET is the latest development of STMicroelectronics unique \\\"Single Feature Size™\\\" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable ma • Exceptional dv/dt capability \n• Application oriented characterization \n• Low gate charge at 100°C \n• Switching application;

N-channel 60V - 0.08廓 - 16A - TO-220/TO-220FP STripFET??II Power MOSFET

文件：325.46 Kbytes Page：14 Pages

Isc N-Channel MOSFET Transistor

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Isc N-Channel MOSFET Transistor

·FEATURES ·Typical RDS(on)=0.08Ω ·With low gate drive requirements ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Solenold and relay dirvers ·DC-DC &DC-CAconverters ·Automotive environment

N-CHANNEL 60V - 0.08 ohm - 16A TO-220/TO-220FP STripFET??II POWER MOSFET

Description This Power MOSFET is the latest development of STMicroelectronics unique Single Feature Size™ strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remark

N-channel 60 V, 0.07 Ohm typ., 16 A STripFET II Power MOSFET in TO-220 package

• TYPICAL RDS(on) = 0.07\n• LOW GATE CHARGE AT 100 °C• EXCEPTIONAL dv/dt CAPABILITY\n• LOW THRESHOLD DRIVE;

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 16A@ TC=25℃ ·Drain Source Voltage -VDSS= 60V(Min) ·Static Drain-Source On-Resistance； -RDS(on) = 0.09Ω(Max)@VGS= 10V APPLICATION ·Motor drive, DC-DC converter, power switch and solenoid drive.

N-CHANNEL 60V - 0.07 ohm - 16A TO-220/TO-220FP STripFET??II POWER MOSFET

DESCRIPTION This Power MOSFET is the latest development of STMicroelectronis unique Single Feature Size™ stripbased process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkab

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 11A@ TC=25℃ ·Drain Source Voltage -VDSS= 60V(Min) ·Static Drain-Source On-Resistance； -RDS(on) = 0.09Ω(Max)@VGS= 10V APPLICATION ·Motor drive, DC-DC converter, power switch and solenoid drive.

N-CHANNEL 60V - 0.07 ohm - 16A TO-220/TO-220FP STripFET??II POWER MOSFET

DESCRIPTION This Power MOSFET is the latest development of STMicroelectronis unique Single Feature Size™ stripbased process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkab

N-channel 60V - 0.08廓 - 16A - TO-220/TO-220FP STripFET??II Power MOSFET

文件：325.46 Kbytes Page：14 Pages

N-channel 60V - 0.08廓 - 16A - TO-220/TO-220FP STripFET??II Power MOSFET

文件：325.46 Kbytes Page：14 Pages

N-Channel 60 V(D-S) MOSFET

文件：1.09154 Mbytes Page：8 Pages

N-CHANNEL 60V - 0.07 ohm - 16A D2PAK STripFET??POWER MOSFET

DESCRIPTION This Power MOSFET is the latest development of STMicroelectronis unique Single Feature Size™ strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarka

N-channel 60V - 0.060 - 24A - DPAK/IPAK STripFET II Power MOSFET

Description This Power MOSFET is the latest development of STMicroelectronics unique Single Feature Size™ strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remark