丝印代码：15810；N-channel 100 V, 0.0036 Ω typ., 110 A, STripFET™ F7 Power MOSFET in a TO-220 package

Features • 100 avalanche tested • Ultra low on-resistance Applications • Switching applications Description This N-channel Power MOSFETs utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal c

MOS(场效应管)

N-Ch 100V Fast Switching MOSFETs

Features Advanced Trench MOS Technology  100 EAS Guaranteed  Super Low RDS(ON)  Green Device Available Applications  MOTOR Driver.  BMS.  High frequency switching and synchronous rectification.

N-Ch 100V Fast Switching MOSFETs

Features Advanced Trench MOS Technology  100 EAS Guaranteed  Super Low RDS(ON)  Green Device Available Applications  MOTOR Driver.  BMS.  High frequency switching and synchronous rectification.

N-channel 100 V, 0.0036 Ω typ., 110 A, STripFET™ F7 Power MOSFET in a TO-220 package

Features • 100 avalanche tested • Ultra low on-resistance Applications • Switching applications Description This N-channel Power MOSFETs utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal c

T1/CEPT/ISDN PRI INTERFACE TRANSFORMER

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