isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 14A@ TC=25℃ ·Drain Source Voltage -VDSS= 120V(Min) ·Static Drain-Source On-Resistance； -RDS(on) = 0.18Ω(Max)@VGS= 10V APPLICATION ·Motor drive, DC-DC converter, power switch and solenoid drive.

N-CHANNEL 120V - 0.16ohm - 14A TO-220/TO-220FP LOW GATE CHARGE STripFET??POWER MOSFET

Description This Power MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high efficiency isolated DC-DC converters for Telecom and Computer a

N-Channel 120V - 0.16Ohm - 14A - TO-220 LOOhm GATE CHARGE StripFET(TM) POWER MOSFET

This Power MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high-efficiency isolated DC-DC converters for Telecom and Computer application. It is Exceptional dv/dt capability\nApplication oriented characterization;

N-Channel 100-V (D-S) MOSFET

文件：939.29 Kbytes Page：7 Pages

N-channel 120V - 0.16OHM - 14A - TO-220/TO-220FP Low gate charge STripFET TM II Power MOSFET

文件：311.19 Kbytes Page：14 Pages

N-CHANNEL 120V - 0.16ohm - 14A TO-220/TO-220FP LOW GATE CHARGE STripFET??POWER MOSFET

Description This Power MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high efficiency isolated DC-DC converters for Telecom and Computer a

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 14A@ TC=25℃ ·Drain Source Voltage -VDSS= 120V(Min) ·Static Drain-Source On-Resistance； -RDS(on) = 0.18Ω(Max)@VGS= 10V APPLICATION ·Motor drive, DC-DC converter, power switch and solenoid drive.

N-Channel 120V - 0.16Ohm - 14A - TO-220FP LOOhm GATE CHARGE StripFET(TM) POWER MOSFET

This Power MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high-efficiency isolated DC-DC converters for Telecom and Computer application. It is Exceptional dv/dt capability\nApplication oriented characterization;

N-channel 120V - 0.16OHM - 14A - TO-220/TO-220FP Low gate charge STripFET TM II Power MOSFET

文件：311.19 Kbytes Page：14 Pages

N-channel 120V - 0.16OHM - 14A - TO-220/TO-220FP Low gate charge STripFET TM II Power MOSFET

文件：311.19 Kbytes Page：14 Pages

N-Channel 100-V (D-S) MOSFET

文件：2.20594 Mbytes Page：8 Pages

N-channel 120V - 0.16OHM - 14A - TO-220/TO-220FP Low gate charge STripFET TM II Power MOSFET

文件：311.19 Kbytes Page：14 Pages