isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 80A@ TC=25℃ ·Drain Source Voltage -VDSS= 55V(Min) ·Static Drain-Source On-Resistance； -RDS(on) = 8mΩ(Max)@VGS= 10V APPLICATION ·Motor drive, DC-DC converter, power switch and solenoid drive.

N-CHANNEL 55V - 0.0065 ohm - 80A TO-220/D2PAK STripFET II POWER MOSFET

Description This Power MOSFET is the latest development of STMicroelectronics unique “Single Feature Size™” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalance characteristics and less critical alignment steps therefore a remar

N沟道55V 0.0065 Ohm 80A TO-220 STRIPFET II MOSFET

This Power MOSFET is the latest development of STMicroelectronics unique “Single Feature Size™” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable manufactu

N-channel 55V - 0.0065廓 - 80A - D2PAK - I2PAK - TO-220 STripFET??II Power MOSFET

文件：483 Kbytes Page：15 Pages

N-Channel 60 V (D-S) MOSFET

文件：998.22 Kbytes Page：7 Pages

N-CHANNEL 55V - 0.0065 ohm - 80A TO-220/D2PAK STripFET II POWER MOSFET

Description This Power MOSFET is the latest development of STMicroelectronics unique “Single Feature Size™” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalance characteristics and less critical alignment steps therefore a remar

N-channel 55V - 0.0065廓 - 80A - D2PAK - I2PAK - TO-220 STripFET??II Power MOSFET

文件：483 Kbytes Page：15 Pages