Medium current, high performance, low voltage NPN transistor

Description The devices are manufactured in low voltage NPN planar technology with “base island” layout. the resulting transistor shows exceptional high gain performance coupled with very low saturation voltage. Features ■ Very low collector to emitter saturation voltage ■ DC current gain, hFE

High current, high performance, low voltage NPN transistors

Description The devices are manufactured in low voltage NPN planar technology with “base island” layout. the resulting transistor shows exceptional high gain performance coupled with very low saturation voltage. Features ■ Very low collector to emitter saturation voltage ■ DC current gain, hFE

封装/外壳：TO-261-4，TO-261AA 包装：带盒（TB） 描述：TRANS NPN 30V 5A SOT223 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

Simultaneously displays measured value and Q or dissipation factor

文件：1.53509 Mbytes Page：8 Pages

NYLON THRU-HOLE SPACER

文件：186.13 Kbytes Page：1 Pages

40,000-Count Dual-Display Handheld LCR Meters

文件：1.54489 Mbytes Page：8 Pages

40,000 counts resolution on primary and 10,000 counts resolution on secondary display

文件：1.53509 Mbytes Page：8 Pages

boxes and ancillary products

文件：3.51246 Mbytes Page：5 Pages