| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
STN83003 | High voltage fast-switching NPN power transistor Description The device is manufactured using high voltage multi-epitaxial planar technology for high switching speeds and high voltage capability. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The STN83003 is expres | STMICROELECTRONICS 意法半导体 |   | |
STN83003 | 高压快速切换NPN功率晶体管 The device is manufactured using high voltage multi-epitaxial planar technology for high switching speeds and high voltage capability. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The STN83003 is expressly designed fo • High voltage capability \n• Very high switching speed; | STMICROELECTRONICS 意法半导体 | | |
STN83003 | 封装/外壳：TO-261-4，TO-261AA 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS NPN 400V 1.5A SOT223 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 | STMICROELECTRONICS 意法半导体 | | |
High voltage fast-switching NPN power transistor Description The device is manufactured using high voltage multi-epitaxial planar technology for high switching speeds and high voltage capability. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The STN83003 is expres | STMICROELECTRONICS 意法半导体 | | ||
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR DESCRIPTION The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The ST83003 is exp | STMICROELECTRONICS 意法半导体 | | ||
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR DESCRIPTION The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The STD83003 is exp | STMICROELECTRONICS 意法半导体 | | ||
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR DESCRIPTION The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The STX83003 is ex | STMICROELECTRONICS 意法半导体 | |
STN83003产品属性
- 类型
描述
- Package：
SOT-223
- Grade：
Industrial
- Transistor Polarity：
NPN
- Collector-Emitter Voltage_nom(V)：
400
- Collector-Base Voltage_max(V)：
700
- Collector Current_max(A)：
1.5
- Dc Current Gain_min：
4
- Dc Current Gain_max：
32
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST/意法 |
25+ |
SOT-223 |
20300 |
ST/意法原装特价STN83003即刻询购立享优惠#长期有货 |
|||
ST |
2025+ |
SOT-223 |
3577 |
全新原厂原装产品、公司现货销售 |
|||
ST |
21+ |
SOT223 |
12613 |
只做原装正品,不止网上数量,欢迎电话微信查询! |
|||
ST/意法 |
2223+ |
SOT223 |
26800 |
只做原装正品假一赔十为客户做到零风险 |
|||
STMicroelectronics |
24+ |
NA |
3000 |
进口原装正品优势供应 |
|||
ST |
18+ |
SOT-223-4 |
470 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
ST/意法 |
2450+ |
SOT-223 |
9850 |
只做原装正品现货或订货假一赔十! |
|||
ST/意法 |
22+ |
SOT-223-4 |
70000 |
现货,原厂原装假一罚十! |
|||
ST |
25+ |
N/A |
20000 |
原装 |
|||
ST/意法半导体 |
25+ |
SOT-223-4 |
70000 |
全新原装正品支持含税 |
STN83003规格书下载地址
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2019-3-29
DdatasheetPDF页码索引
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