Dual Enhancement Mode Field Effect Transistor (N and P Channel)

PRODUCT SUMMARY (N-Channel) VDSS ID RDS(ON) (mΩ) Max 40V 6.6A 45 @ VGS=4.5V 29 @ VGS=10V PRODUCT SUMMARY (P-Channel) VDSS ID RDS(ON) (mΩ) Max -40V -5.8A 60 @ VGS=-4.5V 38 @ VGS=-10V

N- and P-Channel 30 V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Motor Drive • Mobile Power Bank

Mosfets

50 Hz to 3.8 GHz 65 dB TruPwr™ Detector

FEATURES Complete, fully calibrated measurement/control system Accurate rms-to-dc conversion from 50 Hz to 3.8 GHz Input dynamic range of >65 dB: −52 dBm to +8 dBm in 50 Ω Waveform and modulation independent, such as GSM/CDMA/TDMA Linear-in-decibels output, scaled 50 mV/dB Law conformance error

50 Hz to 2.7 GHz 60 dB TruPwr??Detector

GENERAL DESCRIPTION The AD8362 is a true rms-responding power detector that has a 65 dB measurement range. It is intended for use in a variety of high frequency communication systems and in instrumentation requiring an accurate response to signal power. It is easy to use, requiring only a singl

Wire-Thread-Inserts

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50 Hz to 3.8 GHz 65 dB TruPwr??Detector

文件：2.02805 Mbytes Page：32 Pages

50 Hz to 3.8 GHz 65 dB TruPwr Detector

文件：896.64 Kbytes Page：32 Pages