IGBT Sunbber

Snubber,吸收电容，适用于IGBT缓冲线路的突波吸收， 具有多种规格和安装方式，以满足设计需求。 工作温度 : - 40 至 + 105 ˚C\n容量范围 : 0.0047 至 10μF\n额定电压 : 700 至 3000 VDC\n容量偏差 : ± 5% , ± 10%\n损耗因素 : ≤6×10-4 @1KHz 20±5˚C\n预期寿命 : 100,000 小时@Un, 70 ˚C (热点温度)\n极间耐压 : 1.5Un (DC) , （ 10s , 20±5˚C）\n极壳耐压 : (1.5Un+1000)VAC,最小3000VAC（10s，50Hz）\n绝缘电阻 : （ IR×Cn） 30000s（不超过;

1800 - 2200 MHz High Linearity Silicon Germanium Active Transmit Mixer

Product Description The Stanford Microdevices’ STM-2016 is a high linearity active mixer for use in a wide variety of communication systems covering the 1800-2200 MHz frequency bands. This device operates from a single 5V supply and provides 9dB of conversion gain while requiring only 0dBm input

1800-2200 MHz high linearity silicon germanium active transmit mixer.

1800 - 2100 MHz High Linearity Active Transmit Mixer

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1800 - 2100 MHz High Linearity Active Transmit Mixer