N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR ■ TYPICAL RDS(on)= 0.048Ω ■ AVALANCHE RUGGED TECHNOLOGY ■ 100 AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATA AT 100°C ■ LOW GATE CHARGE ■ HIGH CURRENT CAPABILITY ■ 175°C OPERATING TEMPERATURE ■ APPLICATION ORIENTED CHARACTERIZATION

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 60V, 21.8A, RDS(ON) = 50mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-220 & TO-263 package. Lead-free plating ; RoHS compliant. RDS(ON) = 60mW @VGS = 5V.

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 60V, 21.8A, RDS(ON) = 50mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-220 & TO-263 package. Lead-free plating ; RoHS compliant. RDS(ON) = 60mW @VGS = 5V.

N?묬hannel Enhancement?묺ode Silicon Gate

文件：200.17 Kbytes Page：7 Pages

N?묬hannel Power MOSFET

文件：200.14 Kbytes Page：7 Pages

N?묬hannel Enhancement?묺ode Silicon Gate

文件：200.17 Kbytes Page：7 Pages