Automotive-grade N-channel 40 V, 1.2 m typ., 100 A STripFETTM F7 Power MOSFET in a LFPAK 5x6 package

Features • AEC-Q101 qualified • Among the lowest RDS(on) on the market • Excellent FoM (figure of merit) • Low Crss/Ciss ratio for EMI immunity • High avalanche ruggedness Description This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that

汽车级N沟道40 V、1.2 mOhm典型值、100 A STripFET F7功率MOSFET，LFPAK 5x6封装