N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR

N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR ■ TYPICAL RDS(on) = 0.115 Ω ■ AVALANCHE RUGGED TECHNOLOGY ■ 100 AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATA AT 100°C ■ LOW GATE CHARGE ■ LOGIC LEVEL COMPATIBLE INPUT ■ 175oC OPERATING TEMPERATURE FOR STANDARD PACKAGE ■ APPLIC

60V N-Channel DTMOS

Features  Trench Power DTMOS Technology  Low RDS(ON)  Low Gate Charge  Optimized for Fast-switching Applications Applications  Synchronous Rectification in DC/DC and AC/DC Converters  Isolated DC/DC Converters in Telecom and Industrial

N-Channel 60 V (D-S) MOSFET

文件：1.75352 Mbytes Page：8 Pages

12 Amps, 60 Volts N-CHANNEL POWER MOSFET

文件：195.03 Kbytes Page：5 Pages

12A, 60V N-CHANNEL POWER MOSFET

文件：194.68 Kbytes Page：3 Pages

N?륝hannel Logic Level Enhancement Mode Field Effect Transistor

文件：230.11 Kbytes Page：5 Pages