N-Channel Enhancement-Mode MOSFET

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N-Channel Enhancement-Mode MOSFET

N-Channel 60-V (D-S) MOSFET

文件：1.01468 Mbytes Page：8 Pages

N-Channel Enhancement-Mode MOSFET

N-Channel Enhancement-Mode MOSFET

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N-Channel Enhancement-Mode MOSFET

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N-Channel 60-V (D-S) MOSFET

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Small Signal TR > Small Signal MOSFET

Bi-directional Glass passivated junction

Sample Instructions for Choosing a Packing Option (1) If selecting an “L401E6” (sensitive gate, 400 V, 1 A triac in a TO-92 package), choose one of the options available for that device: • Bulk packed in 2,000 quantity • Tape and Reel with 2,000 parts per reel • Tape and Ammo with 2,

Bi-directional Glass passivated junction

Sample Instructions for Choosing a Packing Option (1) If selecting an “L401E6” (sensitive gate, 400 V, 1 A triac in a TO-92 package), choose one of the options available for that device: • Bulk packed in 2,000 quantity • Tape and Reel with 2,000 parts per reel • Tape and Ammo with 2,

Bi-directional Glass passivated junction

Sample Instructions for Choosing a Packing Option (1) If selecting an “L401E6” (sensitive gate, 400 V, 1 A triac in a TO-92 package), choose one of the options available for that device: • Bulk packed in 2,000 quantity • Tape and Reel with 2,000 parts per reel • Tape and Ammo with 2,

P-Channel 60-V (D-S) MOSFET

FEATURES • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • P-Channel • 175 °C Operating Temperature • Dynamic dV/dt Rating • Low Thermal Resistance • Lead (Pb)-free Available

SMD POWER INDUCTORS