THICK FILM HYBRID IC

Features © IMST, 2 Channels by 1 Power Supply. Small shock noise because of direct coupling emitter feedbacked. STK-433-105, 435-105,436-105 and 441-105 are for the use of Tc=105°C

LC2MOS Precision Quad SPST Switches

GENERAL DESCRIPTION The ADG431, ADG432 and ADG433 are monolithic CMOS devices comprising four independently selectable switches. They are designed on an enhanced LC2MOS process which provides low power dissipation yet gives high switching speed and low on resistance. The on resistance profile is

PNP SILICON EPIBASE TRANSISTORS

PNP Silicon Epibase Transistors

COMPLEMENTARY SILICON POWER TRANSISTORS

DESCRIPTION The BD433, BD435, and BD437 are silicon epitaxial-base NPN power transistors in Jedec SOT-32 plastic package, intented for use in medium power linear and switching applications. The BD433 is especially suitable for use in car-radio output stages. The complementary PNP types are BD43

N-CHANNEL POWER MOSFETS

FEATURES • Low RDs(on) at high voltage • Improved inductive ruggedness • Excellent high voltage stability • Fast switching times • Rugged polysilicon gate cell structure • Low input capactiance • Extended safe operating area • Improved high temperature reliablitiy • TO-3 package (High vol

1.0 mm X 4.0 mm Series

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Integrated Circuit Module, Hybrid, Dual Audio Power Amp, 7W/Ch

AF Power Amplifier (5W + 5W min, THD = 1.0%)

THICK FILM HYBRID IC

THICK FILM HYBRID IC

Features of the IMST Hybird ICs

AF Power Amplifier (10W + 10W min, THD = 1.0%)