N-channel 40 V, 1.7 m廓 typ., 160 A, STripFET??VI DeepGATE??Power MOSFET in a I짼PAK package

Description This device is an N-channel Power MOSFET developed using the 6th generation of STripFET™ DeepGATE™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on) in all packages. Features ■ Standard level VGS(th) ■ 100 avalanche rated Applications ■

isc N-Channel MOSFET Transistor

DESCRIPTION • Low Drain-Source On-Resistance FEATURES • Drain Current –ID=22A@ TC=25℃ • Drain Source Voltage- : VDSS= 650V(Min) • Static Drain-Source On-Resistance : RDS(on) = 139mΩ (Max) • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and re

N-channel 650 V, 0.125 廓, 22 A, MDmesh??V Power MOSFET D짼PAK, TO-220FP, I짼PAK, TO-220, TO-247

Description These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low on-resistance, which is unmatched a

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 27A@ TC=25℃ ·Drain Source Voltage -VDSS= 50V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.115Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

N-channel 600V - 0.11廓 - 25A TO-220/FP/D2PAK/I2PAK/TO-247 FDmesh??II Power MOSFET (with fast diode)

Description The FDmesh™ II series belongs to the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the companys strip layout and associates all advantages of reduced on-resistance and fast switching with an intrinsic fast-recovery body

N-channel 600 V, 0.11 廓, 25 A FDmesh??II Power MOSFET (with fast diode) TO-220, TO-220FP, D2PAK, I2PAK, TO-247

Description The FDmesh™ II series belongs to the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the companys strip layout and associates all advantages of reduced on-resistance and fast switching with an intrinsic fast-recovery body

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 25A@ TC=25℃ ·Drain Source Voltage -VDSS=600V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.13Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

N-channel 40 V, 1.7 mOhm, 160 A, STripFET(TM) VI DeepGATE(TM) Power MOSFET in a I2PAK package

N-channel 500 V, 0.090 廓, 27 A MDmesh??II Power MOSFET D2PAK, I2PAK, TO-220FP, TO-220, TO-247

文件：628.06 Kbytes Page：18 Pages

N-channel 600 V, 0.1 廓, 25 A, MDmesh??II Power MOSFET TO-220, TO-220FP, TO-247, D2PAK, I2PAK

文件：768.37 Kbytes Page：18 Pages