位置：首页 > IC中文资料第12547页 > STI30NM60N
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
STI30NM60N | N-channel 600 V, 0.1 廓, 25 A, MDmesh??II Power MOSFET TO-220, TO-220FP, TO-247, D2PAK, I2PAK 文件：768.37 Kbytes Page：18 Pages | STMICROELECTRONICS 意法半导体 |   | |
isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 25A@ TC=25℃ ·Drain Source Voltage -VDSS=600V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.13Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. | ISC 无锡固电 | | ||
N-channel 600 V, 0.11 廓, 25 A FDmesh??II Power MOSFET (with fast diode) TO-220, TO-220FP, D2PAK, I2PAK, TO-247 Description The FDmesh™ II series belongs to the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the companys strip layout and associates all advantages of reduced on-resistance and fast switching with an intrinsic fast-recovery body | STMICROELECTRONICS 意法半导体 | | ||
N-channel 600V - 0.11廓 - 25A TO-220/FP/D2PAK/I2PAK/TO-247 FDmesh??II Power MOSFET (with fast diode) Description The FDmesh™ II series belongs to the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the companys strip layout and associates all advantages of reduced on-resistance and fast switching with an intrinsic fast-recovery body | STMICROELECTRONICS 意法半导体 | | ||
N-channel 600V - 0.11廓 - 25A TO-220/FP/D2PAK/I2PAK/TO-247 FDmesh??II Power MOSFET (with fast diode) Description The FDmesh™ II series belongs to the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the companys strip layout and associates all advantages of reduced on-resistance and fast switching with an intrinsic fast-recovery body | STMICROELECTRONICS 意法半导体 | | ||
N-channel 600 V, 0.11 廓, 25 A FDmesh??II Power MOSFET (with fast diode) TO-220, TO-220FP, D2PAK, I2PAK, TO-247 Description The FDmesh™ II series belongs to the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the companys strip layout and associates all advantages of reduced on-resistance and fast switching with an intrinsic fast-recovery body | STMICROELECTRONICS 意法半导体 | | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 25A@ TC=25℃ ·Drain Source Voltage -VDSS=600V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.13Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. | ISC 无锡固电 | | ||
N-channel 600 V, 0.1 廓, 25 A, MDmesh??II Power MOSFET TO-220, TO-220FP, TO-247, D2PAK, I2PAK 文件：768.37 Kbytes Page：18 Pages | STMICROELECTRONICS 意法半导体 | | ||
N-channel 600 V, 0.1 廓, 25 A, MDmesh??II Power MOSFET TO-220, TO-220FP, TO-247, D2PAK, I2PAK 文件：768.37 Kbytes Page：18 Pages | STMICROELECTRONICS 意法半导体 | |
STI30NM60N产品属性
- 类型
描述
- 型号
STI30NM60N
- 功能描述
MOSFET N-channel 600 V 0.1 ohm 25A Mdmesh
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST |
25+ |
TOTO-220MONO |
12300 |
独立分销商 公司只做原装 诚心经营 免费试样正品保证 |
|||
ST |
25+ |
1 |
公司优势库存 热卖中!! |
||||
ST |
18+ |
TO-262 |
85600 |
保证进口原装可开17%增值税发票 |
|||
ST |
2447 |
TO-262 |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
ST |
23+ |
TO2623 Long Leads I2Pak TO262A |
8000 |
只做原装现货 |
|||
ST全系列 |
25+23+ |
I2PAK |
26457 |
绝对原装正品全新进口深圳现货 |
|||
ST/意法 |
23+ |
QFP |
3000 |
一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、 |
|||
ST |
25+ |
QFP |
2987 |
只售原装自家现货!诚信经营!欢迎来电! |
|||
ST |
22+ |
TO2623 Long Leads I2Pak TO262A |
9000 |
原厂渠道,现货配单 |
|||
SUNTO/尚途 |
24+ |
78741 |
原装正品现货供应 |
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STI30NM60N规格书下载地址
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