N-channel 250V - 0.14廓 - 17A - TO-220/FP - DPAK - I2PAK Low gate charge STripFET??II Power MOSFET

Description This Power MOSFET series realized with STMicroelectronics unique STripFET™ process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high-efficiency isolated DC-DC converters. General features ■ Low g

N-channel 250 V, 0.14 Ohm, 17 A, TO-220FP STripFET(TM) II Power MOSFET

N-channel 250V - 0.14廓 - 17A - TO-220/FP - DPAK - I2PAK Low gate charge STripFET??II Power MOSFET

Description This Power MOSFET series realized with STMicroelectronics unique STripFET™ process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high-efficiency isolated DC-DC converters. General features ■ Low g

3-phase inverter based on STSPIN32F0251

Features • Input voltage 什om 20 V to 120 V DC/AC • STD17NF25 MOSFETs power stage featuring: - VDS = 250 V - Ros(on)max.= 0.165 Q • Overcurrent threshold set to 16 Apeak • Dual footprint for IGBT/MOSFET package: 一 DPAK - PowerFlat 6x5 • Single-shunt current sensing, suitable for: - Sensor

N-channel 250V - 0.14廓 - 17A - TO-220/FP - DPAK - I2PAK Low gate charge STripFET??II Power MOSFET

Description This Power MOSFET series realized with STMicroelectronics unique STripFET™ process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high-efficiency isolated DC-DC converters. General features ■ Low g

N-channel 250V - 0.14廓 - 17A - TO-220/FP - DPAK - I2PAK Low gate charge STripFET??II Power MOSFET

Description This Power MOSFET series realized with STMicroelectronics unique STripFET™ process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high-efficiency isolated DC-DC converters. General features ■ Low g