isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 15.5A@ TC=25℃ ·Drain Source Voltage -VDSS= 620V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.34Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

N-channel 620 V, 0.28 Ohm, 15.5 A, TO-220FP SuperMESH3(TM) Power MOSFET

This SuperMESH3™ Power MOSFET is the result of improvements applied to STMicroelectronics’ SuperMESH™ technology, combined with a new optimized vertical structure. This device boasts an extremely low on-resistance, superior dynamic performance and high avalanche capability, rendering it suitable for • 100% avalanche tested\n• Extremely high dv/dt capability\n• Gate charge minimized• Very low intrinsic capacitance\n• Improved diode reverse recovery characteristics\n• Zener-protected;

Very low intrinsic capacitance

文件：976.7 Kbytes Page：17 Pages

N-channel 620 V, 0.28 廓, 15.5 A, TO-220FP, TO-220, TO-247 SuperMESH3??Power MOSFET

文件：976.63 Kbytes Page：17 Pages

N-Channel 650 V (D-S) MOSFET

文件：1.03239 Mbytes Page：8 Pages

Very low intrinsic capacitance

文件：976.7 Kbytes Page：17 Pages

N-channel 620 V, 0.28 廓, 15.5 A, TO-220FP, TO-220, TO-247 SuperMESH3??Power MOSFET

文件：976.63 Kbytes Page：17 Pages

Very low intrinsic capacitance

文件：976.7 Kbytes Page：17 Pages