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STF16N50M2价格

参考价格:¥13.0977

型号:STF16N50M2 品牌:STMicroelectronics 备注:这里有STF16N50M2多少钱,2026年最近7天走势,今日出价,今日竞价,STF16N50M2批发/采购报价,STF16N50M2行情走势销售排行榜,STF16N50M2报价。
型号 功能描述 生产厂家 企业 LOGO 操作
STF16N50M2

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 13A@ TC=25℃ ·Drain Source Voltage -VDSS= 500V(Min) ·Static Drain-Source On-Resistance; -RDS(on) = 0.28Ω(Max)@VGS= 10V APPLICATION ·Motor drive, DC-DC converter, power switch and solenoid drive.

ISC

无锡固电

STF16N50M2

Extremely low gate charge

Description These devices are N-channel Power MOSFETs developed using MDmesh™ M2 technology. Thanks to their strip layout and improved vertical structure, these devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high efficienc

STMICROELECTRONICS

意法半导体

STF16N50M2

N沟道500 V、0.24 Ohm典型值、13 A MDmesh M2功率MOSFET,TO-220FP封装

This device is an N-channel Power MOSFET developed using MDmesh M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters. • Extremely low gate charge \n• Excellent output capacitance (Coss) profile \n• 100% avalanche tested \n• Zener-protected;

STMICROELECTRONICS

意法半导体

Extremely low gate charge

Description These devices are N-channel Power MOSFETs developed using MDmesh™ M2 technology. Thanks to their strip layout and improved vertical structure, these devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high efficienc

STMICROELECTRONICS

意法半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 13A@ TC=25℃ ·Drain Source Voltage -VDSS= 500V(Min) ·Static Drain-Source On-Resistance; -RDS(on) = 0.28Ω(Max)@VGS= 10V APPLICATION ·Motor drive, DC-DC converter, power switch and solenoid drive.

ISC

无锡固电

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 13A@ TC=25℃ ·Drain Source Voltage -VDSS= 500V(Min) ·Static Drain-Source On-Resistance; -RDS(on) = 0.28Ω(Max)@VGS= 10V APPLICATION ·Motor drive, DC-DC converter, power switch and solenoid drive.

ISC

无锡固电

Extremely low gate charge

Description These devices are N-channel Power MOSFETs developed using MDmesh™ M2 technology. Thanks to their strip layout and improved vertical structure, these devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high efficienc

STMICROELECTRONICS

意法半导体

STF16N50M2产品属性

  • 类型

    描述

  • Package:

    TO-220FP

  • Grade:

    Industrial

  • VDSS(V):

    500

  • RDS(on)_max(@ VGS=10V)(Ω):

    0.28

  • Drain Current (Dc)_max(A):

    13

  • PTOT_max(W):

    25

  • Qg_typ(nC):

    19.5

更新时间:2026-5-21 9:15:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ST
23+24
TO-220
29840
主营MOS管,二极.三极管,肖特基二极管.功率三极管
STMICROELECTRONICS
23+
NA
12730
原装正品代理渠道价格优势
26+
N/A
62000
一级代理-主营优势-实惠价格-不悔选择
ST/意法
22+
N/A
500000
现货,原厂原装假一罚十!
ST/意法
25+
90000
全新原装现货
ST
25+
TO-220F
20000
原装
ST/意法半导体
25+
原厂封装
10280
ST
23+
TO-220
50000
全新原装正品现货,支持订货
ST
26+
TO-220F
60000
只有原装 可配单
ST/意法
22+
N
30000
十七年VIP会员,诚信经营,一手货源,原装正品可零售!

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