N-CHANNEL 600V - 0.098ohm - 40A ISOTOP PowerMesh?줚I MOSFET

DESCRIPTION The PowerMESH™II is the evolution of the first generation of MESH OVERLAY™. The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness. ■ TYPICAL RDS(on) = 0.

N沟道600V 0.098 Ohm 40A ISOTOP POWERMESH II MOSFET

N-channel 40A - 600V - TO-247 Very fast switching PowerMESH IGBT

Description This IGBT utilizes the advanced PowerMESH™ process resulting in an excellent trade-off between switching performance and low on-state behavior. Features ■ Low CRES/ CIES ratio (no cross conduction susceptibility) ■ IGBT co-packaged with ultra fast free-wheeling diode

600 V, 40 A short-circuit rugged IGBT

文件：846.42 Kbytes Page：13 Pages

N-CHANNEL 50A - 600V - TO-247 Very Fast PowerMESH IGBT

文件：279.63 Kbytes Page：10 Pages

N-channel 600V - 50A - Max247 Very fast PowerMESH??IGBT

文件：290.25 Kbytes Page：14 Pages