iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=24A@TC=25℃ ·DrainSourceVoltage :VDSS=900V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.42Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-

HiPerFETPowerMOSFETsQ-CLASS

HiPerFETPowerMOSFETsQ-CLASS SingleMOSFETDie N-ChannelEnhancementMode AvalancheRated,LowQg,Highdv/dt,Lowtrr Applications •DC-DCconverters •Batterychargers •Switched-modeandresonant-modepowersupplies •DCchoppers •ACmotorcontrol •Temperatureandlightingcontrol

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=24A@TC=25℃ ·DrainSourceVoltage- :VDSS=900V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.45Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=13A@TC=25℃ ·DrainSourceVoltage-VDSS=900V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=460mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

PolarPowerMOSFETHiPerFET

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