N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN ISOTOP PACKAGE

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN ISOTOP PACKAGE ■ HIGH CURRENT POWER MODULE ■ AVALANCHE RUGGED TECHNOLOGY (SEE STH60N10 FOR RATING) ■ VERY LARGE SOA - LARGE PEAK POWER CAPABILITY ■ EASY TO MOUNT ■ SAME CURRENT CAPABILITY FOR THE TWO SOURCE TERMINALS ■ EXTREMELY LOW Rth JU

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN ISOTOP PACKAGE

N-Channel Enhancement Mode Field Effect Transistor

Features: ● Low Gate Charge for Fast Switching Application ● Low RDS(ON) to Minimize Conductive Loss ● 100% EAS Guaranteed ● Optimized V(BR)DSS Ruggedness ● Lead-Free,RoHS Compliant Description: The ADM150N10G series MOSFETs is a new technology, which combines an innovative super junc

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 57A@ TC=25℃ ·Drain Source Voltage : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 15mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 57A@ TC=25℃ ·Drain Source Voltage : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 16mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D

N-Channel PowerTrench짰 MOSFET 100V, 57A, 15m廓

文件：526.37 Kbytes Page：8 Pages

N-Channel PowerTrench짰 MOSFET 100 V, 57 A, 16 m廓

文件：563.18 Kbytes Page：8 Pages