General Description

This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.

Features

• RDS(on) = 12mΩ ( Typ.) @ VGS = 10V, ID = 49A

• Fast switching speed

• Low gate charge

• High performance trench technology for extremely low RDS(on)

• High power and current handling capability

• RoHS compliant

Application

• DC to DC convertors / Synchronous Rectification