isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 1.5A@ TC=25℃ ·Drain Source Voltage : VDSS= 1050V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 10Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive,

丝印代码：2N105K5；N-channel 1050 V, 6 廓 typ., 1.5 A MDmesh??K5 Power MOSFETs in DPAK, TO-220 and IPAK packages

文件：1.14192 Mbytes Page：21 Pages

N沟道1050 V、6 Ohm典型值、1.5 A MDmesh K5功率MOSFET，DPAK封装

N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 1.5A@ TC=25℃ · Drain Source Voltage -VDSS= 1050V(Min) · Static Drain-Source On-Resistance -RDS(on) = 8Ω(Max)@VGS= 10V APPLICATIONS · Switching

丝印代码：2N105K5；N-channel 1050 V, 6 廓 typ., 1.5 A Zener-protected SuperMESH??5 Power MOSFET in a TO-3PF package

文件：866.52 Kbytes Page：14 Pages

丝印代码：2N105K5；N-channel 1050 V, 6 廓 typ., 1.5 A MDmesh??K5 Power MOSFETs in DPAK, TO-220 and IPAK packages

文件：1.14192 Mbytes Page：21 Pages