N-Channel E nhancement Mode Field Effect Transistor

FEATURES ● Super high dense cell design for low RDS(ON). ● Rugged and reliable. ● TO-252 and TO-251 Package.

N-Channel 30-V (D-S) MOSFET

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N-Channel E nhancement Mode Field Effect Transistor

N-Channel Enhancement Mode Field Effect Transistor

Features: ● Low Gate Charge for Fast Switching Application ● Low RDS(ON) to Minimize Conductive Loss ● 100% EAS Guaranteed ● Optimized V(BR)DSS Ruggedness ● Green Device Available Description: The ADM25N03Z uses advanced trench technology and design to provide excellent RDS(ON) with l

30V N-Channel Enhancement Mode MOSFET

Features  RDS(ON), VGS@10V,ID@12A

N-Channel Power MOSFET

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N-Channel Enhancement Mode Power MOSFET

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High density cell design for ultra low Rdson

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