NPN Silicon Transistor

Descriptions • Medium power amplifier Features • PC(Collector dissipation)=2W (Ceramic substate of 40×40×0.8mm used) • Low collector saturation voltage : VCE(sat)=0.5V(Typ.) • Complementary pair with STB1188

NPN Silicon Transistor

Descriptions • Medium power amplifier Features • PC(Collector power dissipation)=2W (Ceramic substrate of 250 ㎟ ×0.8t used) • Low collector saturation voltage : VCE(sat)=0.5V(Typ.) • Complementary pair with STB1188 • “Green” device and RoHS compliant device • Available in full lead

NPN Silicon Transistor

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Power Transistors

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DESCRIPTION The BCP1766 is suited for the output stage of 0.5W audio, voltage regulator, and relay driver.

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文件：122.1 Kbytes Page：5 Pages

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文件：757.72 Kbytes Page：9 Pages

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文件：70.08 Kbytes Page：1 Pages