位置：首页 > IC中文资料 > STD15NF10L
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
STD15NF10L | 100V N-Channel Enhancement Mode MOSFET Description The STD15NF10 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Fea VDS = 100V ID = 20A RDS(ON) | UMW 友台半导体 |   | |
STD15NF10L | 100V N-Channel Enhancement Mode MOSFET Description The STD15NF10 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features Vbs = 100V Ip = 20A Rds(on) | EVVOSEMI 翊欧 | | |
100V N-Channel Enhancement Mode MOSFET Description The STD15NF10 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features Vbs = 100V Ip = 20A Rds(on) | EVVOSEMI 翊欧 | | ||
N-channel 100V - 0.060ohm- 23A - DPAK Low gate charge STripFET II Power MOSFET Description This MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high efficiency, high-frequency isolated DC-DC converters for Telecom and Co | STMICROELECTRONICS 意法半导体 | | ||
100V N-Channel Enhancement Mode MOSFET Description The STD15NF10 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Fea VDS = 100V ID = 20A RDS(ON) | UMW 友台半导体 | | ||
N-Channel MOSFET uses advanced trench technology 文件：1.56275 Mbytes Page：5 Pages | DOINGTER 杜因特 | | ||
N-channel 100V - 0.060ohm- 23A - DPAK Low gate charge STripFET II Power MOSFET Description This MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high efficiency, high-frequency isolated DC-DC converters for Telecom and Co | STMICROELECTRONICS 意法半导体 | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST(意法半导体) |
2447 |
TO-252-2(DPAK) |
105000 |
2500片/圆盘一级代理专营品牌!原装正品,优势现货, |
|||
ST/意法 |
23+ |
DPAK |
8215 |
原厂原装 |
|||
STMicroelectronics |
24+ |
NA |
3000 |
进口原装正品优势供应 |
|||
ST |
20+ |
TO252DPAK |
36900 |
原装优势主营型号-可开原型号增税票 |
|||
友台 |
23+ |
TO-252 |
16000 |
优势原装现货假一赔十 |
|||
NK/南科功率 |
2025+ |
TO-252 |
986966 |
国产 |
|||
友台UMW |
25+ |
DIP |
2500 |
国产替换现货降本 |
|||
ST/意法 |
23+ |
NA |
12730 |
原装正品代理渠道价格优势 |
|||
ST |
24+ |
TO-252 |
36800 |
||||
STMicroelectronics |
21+ |
DPAK |
7500 |
100%进口原装!长期供应!绝对优势价格(诚信经营)! |
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深圳市瑞智芯科技有限公司 联系人：彭先生 QQ：2851196982 直线：0755-82991809 手机：13787628849 邮箱：pc@szruizhixin.com 地址：深圳市福田区中航路42号中航北苑大厦A座6A2 型号：STD120N4F6 类别 分立半导体产品 晶体管 - FET，MOSFET - 单个 制造商 STMicroelectronics 包装：2500 封装：TO-252-3
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