N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR ■ TYPICAL RDS(on) = 0.075 Ω ■ AVALANCHE RUGGED TECHNOLOGY ■ 100 AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATA AT 100°C ■ LOW GATE CHARGE ■ HIGH CURRENT CAPABILITY ■ 175°C OPERATING TEMPERATURE ■ APPLICATION ORIENTED CHARACTERIZATION ■ THROU

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR

N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR ■ TYPICAL RDS(on) = 0.075 Ω ■ AVALANCHE RUGGED TECHNOLOGY ■ 100 AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATA AT 100°C ■ LOW GATE CHARGE ■ HIGH CURRENT CAPABILITY ■ 175°C OPERATING TEMPERATURE ■ APPLICATION ORIENTED CHARACTERIZ

N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR

N -CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR

DESCRIPTION The UTC 15N06 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON)

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