NPN Silicon Transistor

Description • General small signal amplifier Features • Low collector saturation voltage : VCE=0.4V(Max.) • Low output capacitance : Cob=2pF(Typ.) • Complementary pair with STA1576

NPN Silicon Transistor

Description • General small signal amplifier Features • Low collector saturation voltage : VCE=0.4V(Max.) • Low output capacitance : Cob=2pF(Typ.) • Complementary pair with STA1576

NPN Silicon Transistor

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Small Signal Transistors

20-Bit, 20 MSPS, Differential SAR ADC

FEATURES ► High performance ► Throughput: 20MSPS, 77.50ns conversion latency ► INL: ±4ppm (typical), ±8ppm (maximum) ► Dynamic range: 94.6dBFS ► SNR/THD ► 94dB (typical)/−117.3dB (typical) at fIN = 1kHz ► 93.7dB (typical)/−103.7dB (typical) at fIN = 1MHz ► Noise spectral density: −164.6dBF

20-Bit, 20 MSPS, Differential SAR ADC

FEATURES ► High performance ► Throughput: 20MSPS, 77.50ns conversion latency ► INL: ±4ppm (typical), ±8ppm (maximum) ► Dynamic range: 94.6dBFS ► SNR/THD ► 94dB (typical)/−117.3dB (typical) at fIN = 1kHz ► 93.7dB (typical)/−103.7dB (typical) at fIN = 1MHz ► Noise spectral density: −164.6dBF

20-Bit, 20 MSPS, Differential SAR ADC

FEATURES ► High performance ► Throughput: 20MSPS, 77.50ns conversion latency ► INL: ±4ppm (typical), ±8ppm (maximum) ► Dynamic range: 94.6dBFS ► SNR/THD ► 94dB (typical)/−117.3dB (typical) at fIN = 1kHz ► 93.7dB (typical)/−103.7dB (typical) at fIN = 1MHz ► Noise spectral density: −164.6dBF

Quad 2-input AND gate

Description BU4001B series ICs are 2-input positive logic NOR gates, each with four built-in circuits. A buffer achieved by an inverter added at the gate output improves the input / output propagation characteristics and minimizes variation in the propagation time caused by an increase in the loa

Flat Vibration Switch - Breadboard friendly

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